Detection of Printable EUV Mask Absorber Defects and Defect Adders by Full Chip Optical Inspection of EUV Patterned Wafers

The ability to rapidly detect both printable EUV mask adder defects as well as mask absorber defects across the entire mask image field is a key enabler for EUV lithography. Current optical wafer-based inspection techniques are only capable of detecting repeater defects on a die-to-die basis for chi...

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Veröffentlicht in:IEEE transactions on semiconductor manufacturing 2017-11, Vol.30 (4), p.402-409
Hauptverfasser: Meli, Luciana, Bonam, Ravi, Halle, Scott, Felix, Nelson
Format: Artikel
Sprache:eng
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