$A Resistor-Based Temperature Sensor With a 0.13 pJ \cdot K2 Resolution FoM$

A Resistor-Based Temperature Sensor With a 0.13 pJ \cdot K2 Resolution FoM

This paper describes a high-resolution energy-efficient CMOS temperature sensor, intended for the temperature compensation of MEMS/quartz frequency references. The sensor is based on silicided poly-silicon thermistors, which are embedded in a Wien-bridge RC filter. When driven at a fixed frequency,...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2018-01, Vol.53 (1), p.164-173
Hauptverfasser:	Sining Pan, Yanquan Luo, Shalmany, Saleh Heidary, Makinwa, Kofi A. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Calibration CMOS CMOS process CMOS temperature sensor continuous-time phase-domain delta-sigma modulator (PDΔΣM) Digitization energy efficiency Energy resolution Intermetallic compounds resistor-based sensor Resistors Sensors Signal resolution Silicides Temperature compensation Temperature dependence Temperature sensors Thermistors
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