Characterisation and Modeling of Gallium Nitride Power Semiconductor Devices Dynamic On-State Resistance

Gallium nitride high-electron-mobility transistors (GaN-HEMTs) suffer from trapping effects that increases device on-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied dc bias when the device is in its off state, and the time which the device is biased...

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Veröffentlicht in:	IEEE transactions on power electronics 2018-06, Vol.33 (6), p.5262-5273
Hauptverfasser:	Li, Ke, Evans, Paul Leonard, Johnson, Christopher Mark
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Circuits Clamps Computer simulation Current measurement Dynamic on-state resistance Electrical resistance measurement Electronics equivalent circuit Gallium nitride gallium nitride high-electron-mobility transistors (GaN-HEMT) Gallium nitrides HEMTs High electron mobility transistors Integrated circuit modeling Mathematical models Model accuracy Power converters power semiconductor device characterisation power semiconductor device modeling Power semiconductor devices Predictions RC circuits Simulators Switches Switching theory Transistors Trapping Voltage measurement
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