High efficiency monolithic InP HEMT V-band power amplifier

High efficiency monolithic InP HEMT V-band power amplifier

This paper reports our development of a monolithic InP HEMT based power amplifier showing state-of-the-art V-band performance. A single-stage amplifier with a 600 um cell periphery demonstrated 224 mW of output power at the peak power-added efficiency of 43% with 7.5 dB power gain at 60 GHz. To the...

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Hauptverfasser: Liu, S.M.J., Tang, O.S.A., Kong, W., Nichols, K., Heaton, J., Chao, P.C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Broadband amplifiers
Gain
Gallium arsenide
HEMTs
High power amplifiers
Indium phosphide
MMICs
Power amplifiers
Power generation
Testing
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Beschreibung
Zusammenfassung:This paper reports our development of a monolithic InP HEMT based power amplifier showing state-of-the-art V-band performance. A single-stage amplifier with a 600 um cell periphery demonstrated 224 mW of output power at the peak power-added efficiency of 43% with 7.5 dB power gain at 60 GHz. To the best of our knowledge, this is the best combination of output power and efficiency reported to date at this frequency for a solid state amplifier.
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.1999.803746