Wide-Bandwidth and High-Linearity Envelope- Tracking Front-End Module for LTE-A Carrier Aggregation Applications
The envelope-tracking front-end module (ETFEM) consisting of an envelope-tracking supply modulator (ETSM), a dual-power-mode power amplifier (PA), and a single-poledouble-throw (SPDT) switch is proposed for the Long-Term Evolution-Advanced (LTE-A) intraband carrier aggregation (CA) signal. The linea...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2017-11, Vol.65 (11), p.4657-4668 |
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creator | Tsai, Wei-Ting Liou, Chong-Yi Peng, Zheng-An Mao, Shau-Gang |
description | The envelope-tracking front-end module (ETFEM) consisting of an envelope-tracking supply modulator (ETSM), a dual-power-mode power amplifier (PA), and a single-poledouble-throw (SPDT) switch is proposed for the Long-Term Evolution-Advanced (LTE-A) intraband carrier aggregation (CA) signal. The linear stage of ETSM is implemented by introducing the dual-path crossover current-reuse mechanism to obtain the measured efficiency 79.6%, 76.4%, 74%, and 72.8% for 7.4-, 9.6-, 11.2-, and 12.3-dB peak-to-average-power ratio (PAPR) 16-QAM LTE-A CA signals with 1 χ 20, 2 χ 20, 3 χ 20, and 4 χ 20 MHz bandwidths, respectively. A SiGe BiCMOS dual-power-mode PA with two output power modes is realized and incorporated with ETSM to improve the adjacent channel leakage ratio (ACLR) by 11.7, 7.9, and 4.7 dB and the error vector magnitude (EVM) by 7.1%, 6.1%, and 4.1% at 26.8-, 24.3-, and 21.7-dBm output powers for the LTE-A 16-QAM signals with 1 χ 20, 2 χ 20, and 3 χ 20 MHz bandwidths at 1.95 GHz, respectively. The SPDT switch integrated with ETSM provides 0.3-dB power loss reduction, 1.1-dB ACLR improvement, and 0.7% EVM enhancement at 12-dBm average input power. The ETFEM operated at 12.5-dB PAPR 64-QAM LTE-A CA signal with 4 χ 20 MHz bandwidth demonstrates that the improvements of 1.3-dB ACLR and 1% EVM at 13.1-dBm output power are achieved for the widebandwidth and high-linearity FEM applications. |
doi_str_mv | 10.1109/TMTT.2017.2744622 |
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The linear stage of ETSM is implemented by introducing the dual-path crossover current-reuse mechanism to obtain the measured efficiency 79.6%, 76.4%, 74%, and 72.8% for 7.4-, 9.6-, 11.2-, and 12.3-dB peak-to-average-power ratio (PAPR) 16-QAM LTE-A CA signals with 1 χ 20, 2 χ 20, 3 χ 20, and 4 χ 20 MHz bandwidths, respectively. A SiGe BiCMOS dual-power-mode PA with two output power modes is realized and incorporated with ETSM to improve the adjacent channel leakage ratio (ACLR) by 11.7, 7.9, and 4.7 dB and the error vector magnitude (EVM) by 7.1%, 6.1%, and 4.1% at 26.8-, 24.3-, and 21.7-dBm output powers for the LTE-A 16-QAM signals with 1 χ 20, 2 χ 20, and 3 χ 20 MHz bandwidths at 1.95 GHz, respectively. The SPDT switch integrated with ETSM provides 0.3-dB power loss reduction, 1.1-dB ACLR improvement, and 0.7% EVM enhancement at 12-dBm average input power. The ETFEM operated at 12.5-dB PAPR 64-QAM LTE-A CA signal with 4 χ 20 MHz bandwidth demonstrates that the improvements of 1.3-dB ACLR and 1% EVM at 13.1-dBm output power are achieved for the widebandwidth and high-linearity FEM applications.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2017.2744622</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Agglomeration ; Bandwidths ; Crossovers ; Envelope-tracking power amplifier (ETPA) ; envelope-tracking supply modulator (ETSM) ; front-end module (FEM) ; Linearity ; Long-Term Evolution-Advanced (LTE-A) carrier aggregation (CA) ; Modulation ; Modules ; Power amplifiers ; Power loss ; Radio frequency ; switch ; Switches ; Switching circuits ; Tracking ; Transistors ; Wideband</subject><ispartof>IEEE transactions on microwave theory and techniques, 2017-11, Vol.65 (11), p.4657-4668</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-f33f00c2eb9bb7b60097d692d6a08ce88e53954c335dd50a2d3c7194529909293</citedby><cites>FETCH-LOGICAL-c359t-f33f00c2eb9bb7b60097d692d6a08ce88e53954c335dd50a2d3c7194529909293</cites><orcidid>0000-0002-2417-9637</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8024155$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8024155$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Tsai, Wei-Ting</creatorcontrib><creatorcontrib>Liou, Chong-Yi</creatorcontrib><creatorcontrib>Peng, Zheng-An</creatorcontrib><creatorcontrib>Mao, Shau-Gang</creatorcontrib><title>Wide-Bandwidth and High-Linearity Envelope- Tracking Front-End Module for LTE-A Carrier Aggregation Applications</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>The envelope-tracking front-end module (ETFEM) consisting of an envelope-tracking supply modulator (ETSM), a dual-power-mode power amplifier (PA), and a single-poledouble-throw (SPDT) switch is proposed for the Long-Term Evolution-Advanced (LTE-A) intraband carrier aggregation (CA) signal. The linear stage of ETSM is implemented by introducing the dual-path crossover current-reuse mechanism to obtain the measured efficiency 79.6%, 76.4%, 74%, and 72.8% for 7.4-, 9.6-, 11.2-, and 12.3-dB peak-to-average-power ratio (PAPR) 16-QAM LTE-A CA signals with 1 χ 20, 2 χ 20, 3 χ 20, and 4 χ 20 MHz bandwidths, respectively. A SiGe BiCMOS dual-power-mode PA with two output power modes is realized and incorporated with ETSM to improve the adjacent channel leakage ratio (ACLR) by 11.7, 7.9, and 4.7 dB and the error vector magnitude (EVM) by 7.1%, 6.1%, and 4.1% at 26.8-, 24.3-, and 21.7-dBm output powers for the LTE-A 16-QAM signals with 1 χ 20, 2 χ 20, and 3 χ 20 MHz bandwidths at 1.95 GHz, respectively. The SPDT switch integrated with ETSM provides 0.3-dB power loss reduction, 1.1-dB ACLR improvement, and 0.7% EVM enhancement at 12-dBm average input power. The ETFEM operated at 12.5-dB PAPR 64-QAM LTE-A CA signal with 4 χ 20 MHz bandwidth demonstrates that the improvements of 1.3-dB ACLR and 1% EVM at 13.1-dBm output power are achieved for the widebandwidth and high-linearity FEM applications.</description><subject>Agglomeration</subject><subject>Bandwidths</subject><subject>Crossovers</subject><subject>Envelope-tracking power amplifier (ETPA)</subject><subject>envelope-tracking supply modulator (ETSM)</subject><subject>front-end module (FEM)</subject><subject>Linearity</subject><subject>Long-Term Evolution-Advanced (LTE-A) carrier aggregation (CA)</subject><subject>Modulation</subject><subject>Modules</subject><subject>Power amplifiers</subject><subject>Power loss</subject><subject>Radio frequency</subject><subject>switch</subject><subject>Switches</subject><subject>Switching circuits</subject><subject>Tracking</subject><subject>Transistors</subject><subject>Wideband</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF1LwzAUhoMoOD9-gHgT8DrzJGna5rKOzQkd3lS8LGmTdpm1qWmn7N_buuHVeQ887znwIHRHYU4pyMdsk2VzBjSasygIQsbO0IwKEREZRnCOZgA0JjKI4RJd9f1uXAMB8Qx171Yb8qRa_WP1sMVjwGtbb0lqW6O8HQ542X6bxnWG4Myr8sO2NV551w5kObIbp_eNwZXzOM2WJMEL5b01Hid17U2tButanHRdY8u_3N-gi0o1vbk9zWv0tlpmizVJX59fFklKSi7kQCrOK4CSmUIWRVSEADLSoWQ6VBCXJo6N4FIEJedCawGKaV5GVAaCSQmSSX6NHo53O---9qYf8p3b-3Z8mTMaBVxSRieKHqnSu773pso7bz-VP-QU8klsPonNJ7H5SezYuT92rDHmn4-BBaNw_gvey3Np</recordid><startdate>201711</startdate><enddate>201711</enddate><creator>Tsai, Wei-Ting</creator><creator>Liou, Chong-Yi</creator><creator>Peng, Zheng-An</creator><creator>Mao, Shau-Gang</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2417-9637</orcidid></search><sort><creationdate>201711</creationdate><title>Wide-Bandwidth and High-Linearity Envelope- Tracking Front-End Module for LTE-A Carrier Aggregation Applications</title><author>Tsai, Wei-Ting ; Liou, Chong-Yi ; Peng, Zheng-An ; Mao, Shau-Gang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-f33f00c2eb9bb7b60097d692d6a08ce88e53954c335dd50a2d3c7194529909293</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Agglomeration</topic><topic>Bandwidths</topic><topic>Crossovers</topic><topic>Envelope-tracking power amplifier (ETPA)</topic><topic>envelope-tracking supply modulator (ETSM)</topic><topic>front-end module (FEM)</topic><topic>Linearity</topic><topic>Long-Term Evolution-Advanced (LTE-A) carrier aggregation (CA)</topic><topic>Modulation</topic><topic>Modules</topic><topic>Power amplifiers</topic><topic>Power loss</topic><topic>Radio frequency</topic><topic>switch</topic><topic>Switches</topic><topic>Switching circuits</topic><topic>Tracking</topic><topic>Transistors</topic><topic>Wideband</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsai, Wei-Ting</creatorcontrib><creatorcontrib>Liou, Chong-Yi</creatorcontrib><creatorcontrib>Peng, Zheng-An</creatorcontrib><creatorcontrib>Mao, Shau-Gang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsai, Wei-Ting</au><au>Liou, Chong-Yi</au><au>Peng, Zheng-An</au><au>Mao, Shau-Gang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Wide-Bandwidth and High-Linearity Envelope- Tracking Front-End Module for LTE-A Carrier Aggregation Applications</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2017-11</date><risdate>2017</risdate><volume>65</volume><issue>11</issue><spage>4657</spage><epage>4668</epage><pages>4657-4668</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>The envelope-tracking front-end module (ETFEM) consisting of an envelope-tracking supply modulator (ETSM), a dual-power-mode power amplifier (PA), and a single-poledouble-throw (SPDT) switch is proposed for the Long-Term Evolution-Advanced (LTE-A) intraband carrier aggregation (CA) signal. The linear stage of ETSM is implemented by introducing the dual-path crossover current-reuse mechanism to obtain the measured efficiency 79.6%, 76.4%, 74%, and 72.8% for 7.4-, 9.6-, 11.2-, and 12.3-dB peak-to-average-power ratio (PAPR) 16-QAM LTE-A CA signals with 1 χ 20, 2 χ 20, 3 χ 20, and 4 χ 20 MHz bandwidths, respectively. A SiGe BiCMOS dual-power-mode PA with two output power modes is realized and incorporated with ETSM to improve the adjacent channel leakage ratio (ACLR) by 11.7, 7.9, and 4.7 dB and the error vector magnitude (EVM) by 7.1%, 6.1%, and 4.1% at 26.8-, 24.3-, and 21.7-dBm output powers for the LTE-A 16-QAM signals with 1 χ 20, 2 χ 20, and 3 χ 20 MHz bandwidths at 1.95 GHz, respectively. The SPDT switch integrated with ETSM provides 0.3-dB power loss reduction, 1.1-dB ACLR improvement, and 0.7% EVM enhancement at 12-dBm average input power. The ETFEM operated at 12.5-dB PAPR 64-QAM LTE-A CA signal with 4 χ 20 MHz bandwidth demonstrates that the improvements of 1.3-dB ACLR and 1% EVM at 13.1-dBm output power are achieved for the widebandwidth and high-linearity FEM applications.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2017.2744622</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0002-2417-9637</orcidid></addata></record> |
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subjects | Agglomeration Bandwidths Crossovers Envelope-tracking power amplifier (ETPA) envelope-tracking supply modulator (ETSM) front-end module (FEM) Linearity Long-Term Evolution-Advanced (LTE-A) carrier aggregation (CA) Modulation Modules Power amplifiers Power loss Radio frequency switch Switches Switching circuits Tracking Transistors Wideband |
title | Wide-Bandwidth and High-Linearity Envelope- Tracking Front-End Module for LTE-A Carrier Aggregation Applications |
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