Wide-Bandwidth and High-Linearity Envelope- Tracking Front-End Module for LTE-A Carrier Aggregation Applications

The envelope-tracking front-end module (ETFEM) consisting of an envelope-tracking supply modulator (ETSM), a dual-power-mode power amplifier (PA), and a single-poledouble-throw (SPDT) switch is proposed for the Long-Term Evolution-Advanced (LTE-A) intraband carrier aggregation (CA) signal. The linea...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2017-11, Vol.65 (11), p.4657-4668
Hauptverfasser: Tsai, Wei-Ting, Liou, Chong-Yi, Peng, Zheng-An, Mao, Shau-Gang
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container_issue 11
container_start_page 4657
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creator Tsai, Wei-Ting
Liou, Chong-Yi
Peng, Zheng-An
Mao, Shau-Gang
description The envelope-tracking front-end module (ETFEM) consisting of an envelope-tracking supply modulator (ETSM), a dual-power-mode power amplifier (PA), and a single-poledouble-throw (SPDT) switch is proposed for the Long-Term Evolution-Advanced (LTE-A) intraband carrier aggregation (CA) signal. The linear stage of ETSM is implemented by introducing the dual-path crossover current-reuse mechanism to obtain the measured efficiency 79.6%, 76.4%, 74%, and 72.8% for 7.4-, 9.6-, 11.2-, and 12.3-dB peak-to-average-power ratio (PAPR) 16-QAM LTE-A CA signals with 1 χ 20, 2 χ 20, 3 χ 20, and 4 χ 20 MHz bandwidths, respectively. A SiGe BiCMOS dual-power-mode PA with two output power modes is realized and incorporated with ETSM to improve the adjacent channel leakage ratio (ACLR) by 11.7, 7.9, and 4.7 dB and the error vector magnitude (EVM) by 7.1%, 6.1%, and 4.1% at 26.8-, 24.3-, and 21.7-dBm output powers for the LTE-A 16-QAM signals with 1 χ 20, 2 χ 20, and 3 χ 20 MHz bandwidths at 1.95 GHz, respectively. The SPDT switch integrated with ETSM provides 0.3-dB power loss reduction, 1.1-dB ACLR improvement, and 0.7% EVM enhancement at 12-dBm average input power. The ETFEM operated at 12.5-dB PAPR 64-QAM LTE-A CA signal with 4 χ 20 MHz bandwidth demonstrates that the improvements of 1.3-dB ACLR and 1% EVM at 13.1-dBm output power are achieved for the widebandwidth and high-linearity FEM applications.
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The linear stage of ETSM is implemented by introducing the dual-path crossover current-reuse mechanism to obtain the measured efficiency 79.6%, 76.4%, 74%, and 72.8% for 7.4-, 9.6-, 11.2-, and 12.3-dB peak-to-average-power ratio (PAPR) 16-QAM LTE-A CA signals with 1 χ 20, 2 χ 20, 3 χ 20, and 4 χ 20 MHz bandwidths, respectively. A SiGe BiCMOS dual-power-mode PA with two output power modes is realized and incorporated with ETSM to improve the adjacent channel leakage ratio (ACLR) by 11.7, 7.9, and 4.7 dB and the error vector magnitude (EVM) by 7.1%, 6.1%, and 4.1% at 26.8-, 24.3-, and 21.7-dBm output powers for the LTE-A 16-QAM signals with 1 χ 20, 2 χ 20, and 3 χ 20 MHz bandwidths at 1.95 GHz, respectively. The SPDT switch integrated with ETSM provides 0.3-dB power loss reduction, 1.1-dB ACLR improvement, and 0.7% EVM enhancement at 12-dBm average input power. 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subjects Agglomeration
Bandwidths
Crossovers
Envelope-tracking power amplifier (ETPA)
envelope-tracking supply modulator (ETSM)
front-end module (FEM)
Linearity
Long-Term Evolution-Advanced (LTE-A) carrier aggregation (CA)
Modulation
Modules
Power amplifiers
Power loss
Radio frequency
switch
Switches
Switching circuits
Tracking
Transistors
Wideband
title Wide-Bandwidth and High-Linearity Envelope- Tracking Front-End Module for LTE-A Carrier Aggregation Applications
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