Photonic Crystal Surface Emitting Lasers With Quantum Dot Active Region

Photonic Crystal Surface Emitting Lasers With Quantum Dot Active Region

GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μ m wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperatur...

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Veröffentlicht in:Journal of lightwave technology 2017-10, Vol.35 (20), p.4547-4552
Hauptverfasser: Chen, Tzu-Shan, Li, Zong-Lin, Hsu, Ming-Yang, Lin, Gray, Lin, Sheng-Di
Format: Artikel
Sprache:eng
Schlagworte:
Lattices
Optical pumping
photonic crystals
Pump lasers
Quantum dot lasers
quantum dots
semiconductor lasers
Surface emitting lasers
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container_issue 20
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container_title Journal of lightwave technology
container_volume 35
creator Chen, Tzu-Shan
Li, Zong-Lin
Hsu, Ming-Yang
Lin, Gray
Lin, Sheng-Di
description GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μ m wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.
doi_str_mv 10.1109/JLT.2017.2744978
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subjects Lattices
Optical pumping
photonic crystals
Pump lasers
Quantum dot lasers
quantum dots
semiconductor lasers
Surface emitting lasers
title Photonic Crystal Surface Emitting Lasers With Quantum Dot Active Region
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