Photonic Crystal Surface Emitting Lasers With Quantum Dot Active Region
GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μ m wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperatur...
Gespeichert in:
Veröffentlicht in: | Journal of lightwave technology 2017-10, Vol.35 (20), p.4547-4552 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μ m wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well. |
---|---|
ISSN: | 0733-8724 1558-2213 |
DOI: | 10.1109/JLT.2017.2744978 |