830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence

We report on our design and fabrication of 830-nm high-power semiconductor lasers with very low beam divergence. Here, we propose a novel approach in which by combining asymmetric waveguide and a feature called "pins" together, we were able to design an optimize epi structure, which not on...

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Veröffentlicht in:	IEEE photonics journal 2017-10, Vol.9 (5), p.1-8
Hauptverfasser:	Qiu, Bocang, Hu, Hai Martin, Wang, Weimin, Ho, James, Liu, Wenbin, Kuang, Langxing, Wang, Taishan, Wu, Shujuan
Format:	Artikel
Sprache:	eng
Schlagworte:	830 nm semiconductor lasers Indium gallium arsenide InGaAs semiconductor lasers Laser beams Low beam divergence low far field Measurement by laser beam Optical waveguides Pins Semiconductor lasers Threshold current
Online-Zugang:	Volltext
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