830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence

We report on our design and fabrication of 830-nm high-power semiconductor lasers with very low beam divergence. Here, we propose a novel approach in which by combining asymmetric waveguide and a feature called "pins" together, we were able to design an optimize epi structure, which not on...

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Veröffentlicht in:	IEEE photonics journal 2017-10, Vol.9 (5), p.1-8
Hauptverfasser:	Qiu, Bocang, Hu, Hai Martin, Wang, Weimin, Ho, James, Liu, Wenbin, Kuang, Langxing, Wang, Taishan, Wu, Shujuan
Format:	Artikel
Sprache:	eng
Schlagworte:	830 nm semiconductor lasers Indium gallium arsenide InGaAs semiconductor lasers Laser beams Low beam divergence low far field Measurement by laser beam Optical waveguides Pins Semiconductor lasers Threshold current
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creator	Qiu, Bocang Hu, Hai Martin Wang, Weimin Ho, James Liu, Wenbin Kuang, Langxing Wang, Taishan Wu, Shujuan
description	We report on our design and fabrication of 830-nm high-power semiconductor lasers with very low beam divergence. Here, we propose a novel approach in which by combining asymmetric waveguide and a feature called "pins" together, we were able to design an optimize epi structure, which not only produces a beam divergence of less than 16°, which is measured at the full width at the half maximum, but also has very good growth tolerance as well. Device test shows the beam divergence is as small as 13°, yet they still retain high slope efficiency of around 1.15 W/A and low threshold current of 400 mA for the devices with cavity length being 2 mm long, and ridge width being 40 μm wide.
doi_str_mv	10.1109/JPHOT.2017.2736880
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subjects	830 nm semiconductor lasers Indium gallium arsenide InGaAs semiconductor lasers Laser beams Low beam divergence low far field Measurement by laser beam Optical waveguides Pins Semiconductor lasers Threshold current
title	830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence
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