All-Silicon Waveguide Photodetection for Low-Bias Power Monitoring and 20-km 28-Gb/s NRZ-OOK Signal Transmission

We investigate the detection characteristics of a vertical p-n junction embedded waveguide in the low-gain region and strong avalanche gain region. Due to the "L" shape p-n junction and relatively high doping concentration, the photon absorption is enhanced and the working bias is reduced....

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2018-03, Vol.24 (2), p.1-7
Hauptverfasser:	Haike Zhu, Goi, Kazuhiro, Ogawa, Kensuke
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Avalanche photodetector Doping high-speed integrated optoelectronics Junctions Monitoring negative photoconductance optical fiber communication Optical waveguides Photodetectors power monitor silicon photonics Temperature measurement transceiver ultrahigh gain-bandwidth product
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