Low-Temperature Solution-Based In2O3 Channel Formation for Thin-Film Transistors Using a Visible Laser-Assisted Combustion Process
This letter reports the low-temperature solution-based fabrication of indium oxide (In 2 O 3 ) thin-film transistors (TFTs) using a visible laser-assisted urea combustion process. An In 2 O 3 precursor solution containing a small amount of urea absorbed the photon energy from a blue laser and starte...
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| Veröffentlicht in: | IEEE electron device letters 2017-09, Vol.38 (9), p.1259-1262 |
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| container_issue | 9 |
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| container_title | IEEE electron device letters |
| container_volume | 38 |
| creator | Choi, Jae-Won Han, Soo-Yeun Nguyen, Manh-Cuong Nguyen, An Hoang-Thuy Kim, Jung Yeon Choi, Sujin Cheon, Jonggyu Ji, Hyungmin Choi, Rino |
| description | This letter reports the low-temperature solution-based fabrication of indium oxide (In 2 O 3 ) thin-film transistors (TFTs) using a visible laser-assisted urea combustion process. An In 2 O 3 precursor solution containing a small amount of urea absorbed the photon energy from a blue laser and started the combustion of urea to form a crystallized In 2 O 3 phase. Atomic force microscopy and X-ray diffraction showed that both laser radiation and urea combustion together are necessary to convert a dried precursor solution layer to a crystallized In 2 O 3 phase. A TFT fabricated from the 0.2-mol% urea-added solution and laser annealed with a 250-J/cm 2 energy fluence exhibited superior transfer characteristics compared with the TFTs fabricated either without urea addition or with small energy fluence radiation. Based on these results and considering the price of blue laser diodes, this technique can be an economical solution for the fabrication of oxide semiconductor TFTs on flexible substrates with a low melting point. |
| doi_str_mv | 10.1109/LED.2017.2734905 |
| format | Article |
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An In 2 O 3 precursor solution containing a small amount of urea absorbed the photon energy from a blue laser and started the combustion of urea to form a crystallized In 2 O 3 phase. Atomic force microscopy and X-ray diffraction showed that both laser radiation and urea combustion together are necessary to convert a dried precursor solution layer to a crystallized In 2 O 3 phase. A TFT fabricated from the 0.2-mol% urea-added solution and laser annealed with a 250-J/cm 2 energy fluence exhibited superior transfer characteristics compared with the TFTs fabricated either without urea addition or with small energy fluence radiation. Based on these results and considering the price of blue laser diodes, this technique can be an economical solution for the fabrication of oxide semiconductor TFTs on flexible substrates with a low melting point.</description><identifier>ISSN: 0741-3106</identifier><identifier>DOI: 10.1109/LED.2017.2734905</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Combustion ; Crystallization ; Fabrication ; In₂O ; Semiconductor lasers ; Solution process ; Thin film transistors ; urea ; visible laser</subject><ispartof>IEEE electron device letters, 2017-09, Vol.38 (9), p.1259-1262</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-4349-2298 ; 0000-0003-0604-7849</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8000382$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8000382$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Choi, Jae-Won</creatorcontrib><creatorcontrib>Han, Soo-Yeun</creatorcontrib><creatorcontrib>Nguyen, Manh-Cuong</creatorcontrib><creatorcontrib>Nguyen, An Hoang-Thuy</creatorcontrib><creatorcontrib>Kim, Jung Yeon</creatorcontrib><creatorcontrib>Choi, Sujin</creatorcontrib><creatorcontrib>Cheon, Jonggyu</creatorcontrib><creatorcontrib>Ji, Hyungmin</creatorcontrib><creatorcontrib>Choi, Rino</creatorcontrib><title>Low-Temperature Solution-Based In2O3 Channel Formation for Thin-Film Transistors Using a Visible Laser-Assisted Combustion Process</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This letter reports the low-temperature solution-based fabrication of indium oxide (In 2 O 3 ) thin-film transistors (TFTs) using a visible laser-assisted urea combustion process. An In 2 O 3 precursor solution containing a small amount of urea absorbed the photon energy from a blue laser and started the combustion of urea to form a crystallized In 2 O 3 phase. Atomic force microscopy and X-ray diffraction showed that both laser radiation and urea combustion together are necessary to convert a dried precursor solution layer to a crystallized In 2 O 3 phase. A TFT fabricated from the 0.2-mol% urea-added solution and laser annealed with a 250-J/cm 2 energy fluence exhibited superior transfer characteristics compared with the TFTs fabricated either without urea addition or with small energy fluence radiation. Based on these results and considering the price of blue laser diodes, this technique can be an economical solution for the fabrication of oxide semiconductor TFTs on flexible substrates with a low melting point.</description><subject>Annealing</subject><subject>Combustion</subject><subject>Crystallization</subject><subject>Fabrication</subject><subject>In₂O</subject><subject>Semiconductor lasers</subject><subject>Solution process</subject><subject>Thin film transistors</subject><subject>urea</subject><subject>visible laser</subject><issn>0741-3106</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotzDFPwzAQhmEPIFEKOxKL_4DD2XHiZCyhLZUiFYmUtXKSCzVK7MpOhVj55aTALTe8nx5C7jhEnEP-UC6fIgFcRULFMofkgsxASc5iDukVuQ7hA4BLqeSMfJfuk1U4HNHr8eSRvrr-NBpn2aMO2NKNFduYFgdtLfZ05fygz5V2ztPqYCxbmX6gldc2mDA6H-guGPtONX0zwdQ90nJyPFuEc5_Awg31KfwaL941GMINuex0H_D2_8_JbrWsimdWbtebYlEyw1UysiarUyFk2yagINMSlWyV4EonWqrpBOZtx_OO8zzppik0Tdx0WZqkTVrrTMRzcv_nGkTcH70ZtP_aZwAQT_UHyZ1d3w</recordid><startdate>201709</startdate><enddate>201709</enddate><creator>Choi, Jae-Won</creator><creator>Han, Soo-Yeun</creator><creator>Nguyen, Manh-Cuong</creator><creator>Nguyen, An Hoang-Thuy</creator><creator>Kim, Jung Yeon</creator><creator>Choi, Sujin</creator><creator>Cheon, Jonggyu</creator><creator>Ji, Hyungmin</creator><creator>Choi, Rino</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><orcidid>https://orcid.org/0000-0003-4349-2298</orcidid><orcidid>https://orcid.org/0000-0003-0604-7849</orcidid></search><sort><creationdate>201709</creationdate><title>Low-Temperature Solution-Based In2O3 Channel Formation for Thin-Film Transistors Using a Visible Laser-Assisted Combustion Process</title><author>Choi, Jae-Won ; Han, Soo-Yeun ; Nguyen, Manh-Cuong ; Nguyen, An Hoang-Thuy ; Kim, Jung Yeon ; Choi, Sujin ; Cheon, Jonggyu ; Ji, Hyungmin ; Choi, Rino</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-c8b6224dd50708a4e74d7217a5a477772e9df19f1195fb620cc3cf8656c6ba823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Annealing</topic><topic>Combustion</topic><topic>Crystallization</topic><topic>Fabrication</topic><topic>In₂O</topic><topic>Semiconductor lasers</topic><topic>Solution process</topic><topic>Thin film transistors</topic><topic>urea</topic><topic>visible laser</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Choi, Jae-Won</creatorcontrib><creatorcontrib>Han, Soo-Yeun</creatorcontrib><creatorcontrib>Nguyen, Manh-Cuong</creatorcontrib><creatorcontrib>Nguyen, An Hoang-Thuy</creatorcontrib><creatorcontrib>Kim, Jung Yeon</creatorcontrib><creatorcontrib>Choi, Sujin</creatorcontrib><creatorcontrib>Cheon, Jonggyu</creatorcontrib><creatorcontrib>Ji, Hyungmin</creatorcontrib><creatorcontrib>Choi, Rino</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library Online</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Choi, Jae-Won</au><au>Han, Soo-Yeun</au><au>Nguyen, Manh-Cuong</au><au>Nguyen, An Hoang-Thuy</au><au>Kim, Jung Yeon</au><au>Choi, Sujin</au><au>Cheon, Jonggyu</au><au>Ji, Hyungmin</au><au>Choi, Rino</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-Temperature Solution-Based In2O3 Channel Formation for Thin-Film Transistors Using a Visible Laser-Assisted Combustion Process</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2017-09</date><risdate>2017</risdate><volume>38</volume><issue>9</issue><spage>1259</spage><epage>1262</epage><pages>1259-1262</pages><issn>0741-3106</issn><coden>EDLEDZ</coden><abstract>This letter reports the low-temperature solution-based fabrication of indium oxide (In 2 O 3 ) thin-film transistors (TFTs) using a visible laser-assisted urea combustion process. An In 2 O 3 precursor solution containing a small amount of urea absorbed the photon energy from a blue laser and started the combustion of urea to form a crystallized In 2 O 3 phase. Atomic force microscopy and X-ray diffraction showed that both laser radiation and urea combustion together are necessary to convert a dried precursor solution layer to a crystallized In 2 O 3 phase. A TFT fabricated from the 0.2-mol% urea-added solution and laser annealed with a 250-J/cm 2 energy fluence exhibited superior transfer characteristics compared with the TFTs fabricated either without urea addition or with small energy fluence radiation. Based on these results and considering the price of blue laser diodes, this technique can be an economical solution for the fabrication of oxide semiconductor TFTs on flexible substrates with a low melting point.</abstract><pub>IEEE</pub><doi>10.1109/LED.2017.2734905</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-4349-2298</orcidid><orcidid>https://orcid.org/0000-0003-0604-7849</orcidid></addata></record> |
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| subjects | Annealing Combustion Crystallization Fabrication In₂O Semiconductor lasers Solution process Thin film transistors urea visible laser |
| title | Low-Temperature Solution-Based In2O3 Channel Formation for Thin-Film Transistors Using a Visible Laser-Assisted Combustion Process |
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