Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications

We perform a comparative study of HfO 2 and Ta 2 O 5 resistive switching memory (RRAM) devices for their possible application as electronic synapses. By means of electrical characterization and simulations, we link their electrical behavior (digital or analog switching) to the properties and evoluti...

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Veröffentlicht in:	IEEE electron device letters 2017-09, Vol.38 (9), p.1220-1223
Hauptverfasser:	Jiyong Woo, Padovani, Andrea, Kibong Moon, Myounghun Kwak, Larcher, Luca, Hyunsang Hwang
Format:	Artikel
Sprache:	eng
Schlagworte:	Biological neural networks filamentary switching Hafnium compounds Modulation neuromorphic systems Neuromorphics Neurons Pattern recognition Resistive switching memory (RRAM) Switches synaptic device
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