The prevention of charge damage on thin gate oxide from high density plasma deposition

In this paper, thin gate oxide charge damage caused by high-density-plasma (HDP) deposition of inter-metal dielectric (IMD) was studied. In a nonoptimized HDP process, it is easy to generate nonuniform plasma charges. The plasma charges flow along metal lines, contact holes, and poly-gates to damage...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Shih, H.H., Tsai, C.Y., Yang, G.S., Chen, K.C., Yew, T.R., Lur, W., Liou, F.T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Channel bank filters Chemical vapor deposition CMOS process Dielectrics Optical films Planarization Plasma applications Plasma chemistry Plasma density Plasma devices
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