A temperature-dependent electrothermal MOSFET model for calculating its current loadability

A developed temperature-dependent electrothermal model consists of a temperature dependent MOSFET model and a temperature independent model of the MOSFET thermal system. The temperature dependent MOSFET parameters are the channel charge carriers mobility, drift area resistance and threshold voltage....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sunde, V., Bencic, Z., Jakopovic, Z.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier mobility Diodes Electrothermal effects Loss measurement MOSFET circuits Power system modeling Temperature dependence Temperature measurement Threshold voltage Time measurement
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