On the Investigation of the "Anode Side" SuperJunction IGBT Design Concept

In this letter, we present the "anode-side" SuperJunction trench field stop+ IGBT concept with drift region SuperJunction pillars placed at the anode side of the structure rather than the cathode side. The extent of the pillars toward the cathode side is shown to pose a tradeoff between fa...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2017-08, Vol.38 (8), p.1063-1066
Hauptverfasser:	Antoniou, Marina, Lophitis, Neophytos, Udrea, Florin, Bauer, Friedhelm, Vemulapati, Umamaheswara Reddy, Badstuebner, Uwe
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodes Breakdown Cathodes Decoupling Drift Electric fields Fabrication field stop Insulated gate bipolar transistor Insulated gate bipolar transistors Performance evaluation Pillars point injection Steering SuperJunction (SJ) Switches Switching Voltage drop
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!