Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit
A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated la...
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| Veröffentlicht in: | IEEE photonics journal 2017-08, Vol.9 (4), p.1-9 |
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| creator | Kumari, Sulakshna Gustavsson, Johan Haglund, Emanuel P. Bengtsson, Jorgen Larsson, Anders Roelkens, Gunther Baets, Roel |
| description | A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm -1 , respectively, for the lasing. |
| doi_str_mv | 10.1109/JPHOT.2017.2717380 |
| format | Article |
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The numerical simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm -1 , respectively, for the lasing.</description><identifier>ISSN: 1943-0655</identifier><identifier>EISSN: 1943-0647</identifier><identifier>DOI: 10.1109/JPHOT.2017.2717380</identifier><identifier>CODEN: PJHOC3</identifier><language>eng</language><publisher>IEEE</publisher><subject>Couplings ; Distributed Bragg reflectors ; Gratings ; Optical waveguides ; semiconductor lasers ; Silicon compounds ; silicon nanophotonics ; Vertical cavity surface emitting lasers ; Waveguide ; Waveguide lasers</subject><ispartof>IEEE photonics journal, 2017-08, Vol.9 (4), p.1-9</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c453t-a1639942f668f692460804eb2687606a739d3e9f9b02d9b4462b3391b7a48be93</citedby><cites>FETCH-LOGICAL-c453t-a1639942f668f692460804eb2687606a739d3e9f9b02d9b4462b3391b7a48be93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7954576$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>230,314,552,780,784,864,885,2100,27632,27923,27924,54932</link.rule.ids><backlink>$$Uhttps://research.chalmers.se/publication/250585$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Kumari, Sulakshna</creatorcontrib><creatorcontrib>Gustavsson, Johan</creatorcontrib><creatorcontrib>Haglund, Emanuel P.</creatorcontrib><creatorcontrib>Bengtsson, Jorgen</creatorcontrib><creatorcontrib>Larsson, Anders</creatorcontrib><creatorcontrib>Roelkens, Gunther</creatorcontrib><creatorcontrib>Baets, Roel</creatorcontrib><title>Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit</title><title>IEEE photonics journal</title><addtitle>JPHOT</addtitle><description>A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm -1 , respectively, for the lasing.</description><subject>Couplings</subject><subject>Distributed Bragg reflectors</subject><subject>Gratings</subject><subject>Optical waveguides</subject><subject>semiconductor lasers</subject><subject>Silicon compounds</subject><subject>silicon nanophotonics</subject><subject>Vertical cavity surface emitting lasers</subject><subject>Waveguide</subject><subject>Waveguide lasers</subject><issn>1943-0655</issn><issn>1943-0647</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>D8T</sourceid><sourceid>DOA</sourceid><recordid>eNpVkd9u0zAUhyMEEmPwAnDjF0ixHf_JuZwKdEUVQ9qAS-vEOW49pUllp5v2ALw3yTpV4sr2Ob_fJ1lfUXwUfCEEh8_ff17f3C0kF3YhrbBVzV8VFwJUVXKj7OvzXeu3xbuc7zk3IDRcFH-_UI7bng2BYc9qpct-z1Z4ldlvSmP02JVLfIjjE7uNXfRDX677kbYJR2rZBjMl9hjH3VyeFgn9KbyaArHfsjAkthyOh25-jAPDCfOD_cEH2h5jS2wZkz_G8X3xJmCX6cPLeVn8-vb1bnldbm5W6-XVpvRKV2OJwlQASgZj6mBAKsNrrqiRpraGG7QVtBVBgIbLFhqljGyqCkRjUdUNQXVZrE_cdsB7d0hxj-nJDRjd82BIW4fzrztyviUJQQcjQSg0FloRZCs9aFvbhvjEuj2x8iMdjs1_tESZMPmd8zvs9pSyy-QCp6bG1juDHJzSAG6Swl3wFXhdN6HVeqLKE9WnIedE4cwV3M2q3bNqN6t2L6qn0qdTKRLRuWBBK21N9Q8dbaTo</recordid><startdate>20170801</startdate><enddate>20170801</enddate><creator>Kumari, Sulakshna</creator><creator>Gustavsson, Johan</creator><creator>Haglund, Emanuel P.</creator><creator>Bengtsson, Jorgen</creator><creator>Larsson, Anders</creator><creator>Roelkens, Gunther</creator><creator>Baets, Roel</creator><general>IEEE</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>ABBSD</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>D8T</scope><scope>F1S</scope><scope>ZZAVC</scope><scope>DOA</scope></search><sort><creationdate>20170801</creationdate><title>Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit</title><author>Kumari, Sulakshna ; Gustavsson, Johan ; Haglund, Emanuel P. ; Bengtsson, Jorgen ; Larsson, Anders ; Roelkens, Gunther ; Baets, Roel</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c453t-a1639942f668f692460804eb2687606a739d3e9f9b02d9b4462b3391b7a48be93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Couplings</topic><topic>Distributed Bragg reflectors</topic><topic>Gratings</topic><topic>Optical waveguides</topic><topic>semiconductor lasers</topic><topic>Silicon compounds</topic><topic>silicon nanophotonics</topic><topic>Vertical cavity surface emitting lasers</topic><topic>Waveguide</topic><topic>Waveguide lasers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumari, Sulakshna</creatorcontrib><creatorcontrib>Gustavsson, Johan</creatorcontrib><creatorcontrib>Haglund, Emanuel P.</creatorcontrib><creatorcontrib>Bengtsson, Jorgen</creatorcontrib><creatorcontrib>Larsson, Anders</creatorcontrib><creatorcontrib>Roelkens, Gunther</creatorcontrib><creatorcontrib>Baets, Roel</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>SWEPUB Chalmers tekniska högskola full text</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Freely available online</collection><collection>SWEPUB Chalmers tekniska högskola</collection><collection>SwePub Articles full text</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE photonics journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumari, Sulakshna</au><au>Gustavsson, Johan</au><au>Haglund, Emanuel P.</au><au>Bengtsson, Jorgen</au><au>Larsson, Anders</au><au>Roelkens, Gunther</au><au>Baets, Roel</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit</atitle><jtitle>IEEE photonics journal</jtitle><stitle>JPHOT</stitle><date>2017-08-01</date><risdate>2017</risdate><volume>9</volume><issue>4</issue><spage>1</spage><epage>9</epage><pages>1-9</pages><issn>1943-0655</issn><eissn>1943-0647</eissn><coden>PJHOC3</coden><abstract>A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm -1 , respectively, for the lasing.</abstract><pub>IEEE</pub><doi>10.1109/JPHOT.2017.2717380</doi><tpages>9</tpages><oa>free_for_read</oa></addata></record> |
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| source | IEEE Open Access Journals; DOAJ Directory of Open Access Journals; SWEPUB Freely available online; EZB-FREE-00999 freely available EZB journals |
| subjects | Couplings Distributed Bragg reflectors Gratings Optical waveguides semiconductor lasers Silicon compounds silicon nanophotonics Vertical cavity surface emitting lasers Waveguide Waveguide lasers |
| title | Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit |
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