Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate Displays
This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate drive...
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| Veröffentlicht in: | IEEE transactions on electron devices 2017-08, Vol.64 (8), p.3494-3497 |
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| container_title | IEEE transactions on electron devices |
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| creator | Lin, Chih-Lung Chen, Fu-Hsing Wang, Ming-Xun Lai, Po-Cheng Tseng, Chin-Hsien |
| description | This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05 μs, 1.31 μs, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h. |
| doi_str_mv | 10.1109/TED.2017.2710180 |
| format | Article |
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The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. 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The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05 μs, 1.31 μs, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.</description><subject>Amorphous silicon</subject><subject>Clocks</subject><subject>Falling time</subject><subject>gate driver circuit</subject><subject>hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT)</subject><subject>Life estimation</subject><subject>Logic gates</subject><subject>rising time</subject><subject>Thin film transistors</subject><subject>Voltage measurement</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF9LwzAUxYMoOKfvgi_5AplJk6aNb27ujzAQtoqPJW1vt0jXlCRT9g382HZu-HQ4h3vOhR9C94yOGKPqMZu-jCLKklGUMMpSeoEGLI4ToqSQl2hA-4wonvJrdOP9Z2-lENEA_cx1APzizBc4PNYeKmxbrMnaPC1wtjUtmZlmhzOnW298sM7jDxO2OPu2ZB2gI2Nrgw9Od51pN3gd3L4Mewe4tg4vzGZLVuBtsw_mONtWp2zm9A7I6u-18V2jD_4WXdW68XB31iF6n02zyYIs3-avk-clKSPJA4mlEsBEykVRKpqqqBK1ogAylRIqqFmh6l7jtKhikIVSdVlFKiqKOO2d5nyI6Gm3dNZ7B3XeObPT7pAzmh9J5j3J_EgyP5PsKw-nigGA__NEiYQqzn8Bnz5xUw</recordid><startdate>201708</startdate><enddate>201708</enddate><creator>Lin, Chih-Lung</creator><creator>Chen, Fu-Hsing</creator><creator>Wang, Ming-Xun</creator><creator>Lai, Po-Cheng</creator><creator>Tseng, Chin-Hsien</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-4948-8591</orcidid></search><sort><creationdate>201708</creationdate><title>Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate Displays</title><author>Lin, Chih-Lung ; Chen, Fu-Hsing ; Wang, Ming-Xun ; Lai, Po-Cheng ; Tseng, Chin-Hsien</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-5694e14834bc90892d4f90ee6866edef1b9fede58bd5e6b99fcd292bb586b9a33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Amorphous silicon</topic><topic>Clocks</topic><topic>Falling time</topic><topic>gate driver circuit</topic><topic>hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT)</topic><topic>Life estimation</topic><topic>Logic gates</topic><topic>rising time</topic><topic>Thin film transistors</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Chih-Lung</creatorcontrib><creatorcontrib>Chen, Fu-Hsing</creatorcontrib><creatorcontrib>Wang, Ming-Xun</creatorcontrib><creatorcontrib>Lai, Po-Cheng</creatorcontrib><creatorcontrib>Tseng, Chin-Hsien</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Explore</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lin, Chih-Lung</au><au>Chen, Fu-Hsing</au><au>Wang, Ming-Xun</au><au>Lai, Po-Cheng</au><au>Tseng, Chin-Hsien</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate Displays</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2017-08</date><risdate>2017</risdate><volume>64</volume><issue>8</issue><spage>3494</spage><epage>3497</epage><pages>3494-3497</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05 μs, 1.31 μs, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.</abstract><pub>IEEE</pub><doi>10.1109/TED.2017.2710180</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-4948-8591</orcidid></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3494-3497 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Explore |
| subjects | Amorphous silicon Clocks Falling time gate driver circuit hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) Life estimation Logic gates rising time Thin film transistors Voltage measurement |
| title | Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate Displays |
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