A Unified Continuous and Discrete Model for Double-Gate MOSFETs With Spatially Varying or Pulsed Doping Profiles
This paper presents a unified continuous and discrete model covering all device operating regions of double-gate MOSFETs for the first time. With a specific variable transformation method, the 1-D Poisson's equation in the Cartesian coordinate for double-gate MOSFETs is transformed into the cor...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2017-07, Vol.5 (4), p.244-255 |
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| container_title | IEEE journal of the Electron Devices Society |
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| creator | Chuyang Hong Jun Zhou Qi Cheng Kunkun Zhu Kuo, James B. Yijian Chen |
| description | This paper presents a unified continuous and discrete model covering all device operating regions of double-gate MOSFETs for the first time. With a specific variable transformation method, the 1-D Poisson's equation in the Cartesian coordinate for double-gate MOSFETs is transformed into the corresponding form in the cylindrical coordinate. Such a transformed cylindrical Poisson's equation results in a simple algebraic equation, which correlates the (inversion-charge induced) surface potential to the field and allows the long-channel drain-current formula to be derived from the Pao-Sah integral. This model can be readily applied to predict the effects of both continuous and discrete doping variations. The short-channel-effect model is also developed by solving the 2-D Poisson's equation using the eigenfunction-expansion method. The accuracy of both long-channel and short-channel models is confirmed by the numerical calculations and TCAD simulations. |
| doi_str_mv | 10.1109/JEDS.2017.2704106 |
| format | Article |
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With a specific variable transformation method, the 1-D Poisson's equation in the Cartesian coordinate for double-gate MOSFETs is transformed into the corresponding form in the cylindrical coordinate. Such a transformed cylindrical Poisson's equation results in a simple algebraic equation, which correlates the (inversion-charge induced) surface potential to the field and allows the long-channel drain-current formula to be derived from the Pao-Sah integral. This model can be readily applied to predict the effects of both continuous and discrete doping variations. The short-channel-effect model is also developed by solving the 2-D Poisson's equation using the eigenfunction-expansion method. 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With a specific variable transformation method, the 1-D Poisson's equation in the Cartesian coordinate for double-gate MOSFETs is transformed into the corresponding form in the cylindrical coordinate. Such a transformed cylindrical Poisson's equation results in a simple algebraic equation, which correlates the (inversion-charge induced) surface potential to the field and allows the long-channel drain-current formula to be derived from the Pao-Sah integral. This model can be readily applied to predict the effects of both continuous and discrete doping variations. The short-channel-effect model is also developed by solving the 2-D Poisson's equation using the eigenfunction-expansion method. The accuracy of both long-channel and short-channel models is confirmed by the numerical calculations and TCAD simulations.</description><subject>discrete dopant variations</subject><subject>Doping profiles</subject><subject>Double-gate MOSFET/FinFET</subject><subject>Mathematical model</subject><subject>MOSFET</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor process modeling</subject><subject>surface-field based model</subject><issn>2168-6734</issn><issn>2168-6734</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNkU1OwzAQhSMEEgh6AMTGF0ixY9dOllXLr4paqQWWlh2Pi1GIIztZcHscWiFm80ZvZj6N9LLsmuApIbi6fb5bbqcFJmJaCMwI5ifZRUF4mXNB2em__jybxPiJU5WEV5xfZN0cvbbOOjBo4dvetYMfIlKtQUsX6wA9oBdvoEHWB7T0g24gf1Cju97e3-0ienf9B9p2qneqab7Rmwrfrt2jtL0ZmpiwS9-NxiZ46xqIV9mZVWkwOepltkucxWO-Wj88LearvKaC9bkGqzgjFSitZqAFLkpbCs1FgbFNIqhlhlisgdNZxQUjpaE1oxyYoVrQy-zpgDVefcouuK_0mPTKyV_Dh71UoXd1A1IXtVW0VmbGMANelboErDVlSmuhTZFY5MCqg48xgP3jESzHAOQYgBwDkMcA0s3N4cYBwN--qArBqxn9AfjSgiw</recordid><startdate>20170701</startdate><enddate>20170701</enddate><creator>Chuyang Hong</creator><creator>Jun Zhou</creator><creator>Qi Cheng</creator><creator>Kunkun Zhu</creator><creator>Kuo, James B.</creator><creator>Yijian Chen</creator><general>IEEE</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-4668-7413</orcidid></search><sort><creationdate>20170701</creationdate><title>A Unified Continuous and Discrete Model for Double-Gate MOSFETs With Spatially Varying or Pulsed Doping Profiles</title><author>Chuyang Hong ; Jun Zhou ; Qi Cheng ; Kunkun Zhu ; Kuo, James B. ; Yijian Chen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-befa6419eaba5eb7028f87b67200fb6773f4d1f0be635967418d3c436e4d3b73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>discrete dopant variations</topic><topic>Doping profiles</topic><topic>Double-gate MOSFET/FinFET</topic><topic>Mathematical model</topic><topic>MOSFET</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor process modeling</topic><topic>surface-field based model</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chuyang Hong</creatorcontrib><creatorcontrib>Jun Zhou</creatorcontrib><creatorcontrib>Qi Cheng</creatorcontrib><creatorcontrib>Kunkun Zhu</creatorcontrib><creatorcontrib>Kuo, James B.</creatorcontrib><creatorcontrib>Yijian Chen</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE journal of the Electron Devices Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chuyang Hong</au><au>Jun Zhou</au><au>Qi Cheng</au><au>Kunkun Zhu</au><au>Kuo, James B.</au><au>Yijian Chen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Unified Continuous and Discrete Model for Double-Gate MOSFETs With Spatially Varying or Pulsed Doping Profiles</atitle><jtitle>IEEE journal of the Electron Devices Society</jtitle><stitle>JEDS</stitle><date>2017-07-01</date><risdate>2017</risdate><volume>5</volume><issue>4</issue><spage>244</spage><epage>255</epage><pages>244-255</pages><issn>2168-6734</issn><eissn>2168-6734</eissn><coden>IJEDAC</coden><abstract>This paper presents a unified continuous and discrete model covering all device operating regions of double-gate MOSFETs for the first time. With a specific variable transformation method, the 1-D Poisson's equation in the Cartesian coordinate for double-gate MOSFETs is transformed into the corresponding form in the cylindrical coordinate. Such a transformed cylindrical Poisson's equation results in a simple algebraic equation, which correlates the (inversion-charge induced) surface potential to the field and allows the long-channel drain-current formula to be derived from the Pao-Sah integral. This model can be readily applied to predict the effects of both continuous and discrete doping variations. The short-channel-effect model is also developed by solving the 2-D Poisson's equation using the eigenfunction-expansion method. The accuracy of both long-channel and short-channel models is confirmed by the numerical calculations and TCAD simulations.</abstract><pub>IEEE</pub><doi>10.1109/JEDS.2017.2704106</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0002-4668-7413</orcidid><oa>free_for_read</oa></addata></record> |
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| source | IEEE Open Access Journals; DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals |
| subjects | discrete dopant variations Doping profiles Double-gate MOSFET/FinFET Mathematical model MOSFET Semiconductor device modeling Semiconductor process modeling surface-field based model |
| title | A Unified Continuous and Discrete Model for Double-Gate MOSFETs With Spatially Varying or Pulsed Doping Profiles |
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