A Low-Power 28-nm CMOS FD-SOI Reflection Amplifier for an Active F-Band Reflectarray

A new topology of a low-power F-band reflection amplifier for active reflectarrays is proposed and demonstrated using a CMOS fully depleted silicon-on-insulator 28-nm process. The design enables frequency response and center frequency tuning, as well as phase control of the reflected signal. The chi...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2017-10, Vol.65 (10), p.3910-3921
Hauptverfasser:	Landsberg, Naftali, Socher, Eran
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Amplifiers Antenna arrays Antenna gain Capacitors CMOS CMOS integrated circuits Dual polarization (waves) Frequency ranges Frequency response Impedance Logic gates Microstrip antennas microwave amplifiers millimeter-wave circuits Noise levels Oscillators Phase control phase shifters phased arrays Polarization Power consumption Receivers & amplifiers Reflection reflector antennas Resistance silicon-on-insulator technology SOI (semiconductors) Transistors
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