Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs

Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600/spl deg/C. The hole mobilities obtained are up to 40 cm/sup 2/ V/sup -1/ s/sup -1/ at room temperature without any post g...

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Hauptverfasser:	Zuo, H.Y., Paterson, M.J., Goldys, E., Tansley, T.L., Afifuddin
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chemical lasers Chemical vapor deposition Gallium arsenide Gallium nitride Laser theory Masers Plasma temperature Semiconductor lasers Silicon Substrates
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creator	Zuo, H.Y. Paterson, M.J. Goldys, E. Tansley, T.L. Afifuddin
description	Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600/spl deg/C. The hole mobilities obtained are up to 40 cm/sup 2/ V/sup -1/ s/sup -1/ at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.
doi_str_mv	10.1109/COMMAD.1998.791619
format	Conference Proceeding
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The hole mobilities obtained are up to 40 cm/sup 2/ V/sup -1/ s/sup -1/ at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.</description><identifier>ISBN: 9780780345133</identifier><identifier>ISBN: 0780345134</identifier><identifier>DOI: 10.1109/COMMAD.1998.791619</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chemical lasers ; Chemical vapor deposition ; Gallium arsenide ; Gallium nitride ; Laser theory ; Masers ; Plasma temperature ; Semiconductor lasers ; Silicon ; Substrates</subject><ispartof>1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. 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Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.</description><subject>Chemical lasers</subject><subject>Chemical vapor deposition</subject><subject>Gallium arsenide</subject><subject>Gallium nitride</subject><subject>Laser theory</subject><subject>Masers</subject><subject>Plasma temperature</subject><subject>Semiconductor lasers</subject><subject>Silicon</subject><subject>Substrates</subject><isbn>9780780345133</isbn><isbn>0780345134</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jsGKwkAQRAdEUDQ_4Kk_QLMZY9Q5iu6uB6MX79IkndiSZIbpKPj3G3HPFgUF9SgopSY6CrWOzNf2lKabXaiNWYcro5fa9FRgVuuoc7xIdBwPVCByizotkkTPzVDlBxTygCIsLeVQU4uV9SU2nEF2pZozrOCBzt495OSscMu2AVtAWkJuXbf5xSN0lXDFmW2mIOjclT0BNi-4kbHqF1gJBf85UpOf7_N2P2MiujjPNfrn5X05_gj_AN5uRi4</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Zuo, H.Y.</creator><creator>Paterson, M.J.</creator><creator>Goldys, E.</creator><creator>Tansley, T.L.</creator><creator>Afifuddin</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1998</creationdate><title>Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs</title><author>Zuo, H.Y. ; Paterson, M.J. ; Goldys, E. ; Tansley, T.L. ; Afifuddin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_7916193</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Chemical lasers</topic><topic>Chemical vapor deposition</topic><topic>Gallium arsenide</topic><topic>Gallium nitride</topic><topic>Laser theory</topic><topic>Masers</topic><topic>Plasma temperature</topic><topic>Semiconductor lasers</topic><topic>Silicon</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Zuo, H.Y.</creatorcontrib><creatorcontrib>Paterson, M.J.</creatorcontrib><creatorcontrib>Goldys, E.</creatorcontrib><creatorcontrib>Tansley, T.L.</creatorcontrib><creatorcontrib>Afifuddin</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zuo, H.Y.</au><au>Paterson, M.J.</au><au>Goldys, E.</au><au>Tansley, T.L.</au><au>Afifuddin</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs</atitle><btitle>1998 Conference on Optoelectronic and Microelectronic Materials and Devices. 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identifier	ISBN: 9780780345133
ispartof	1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140), 1998, p.199-201
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language	eng
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Chemical lasers Chemical vapor deposition Gallium arsenide Gallium nitride Laser theory Masers Plasma temperature Semiconductor lasers Silicon Substrates
title	Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs
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