Non-Reciprocal Acoustic Transmission in a GaN Delay Line Using the Acoustoelectric Effect

This letter reports on first-time demonstration of non-reciprocal acoustic transmission in a gallium nitride (GaN) delay line structure. The split of forward (S21) and backward (S12) transmissions is observed by applying a dc electric field through the active area with a two-dimensional electron gas...

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Veröffentlicht in:	IEEE electron device letters 2017-06, Vol.38 (6), p.802-805
Hauptverfasser:	Zhu, Haoshen, Rais-Zadeh, Mina
Format:	Artikel
Sprache:	eng
Schlagworte:	Acoustoelectric effect Carrier density Delay Delay lines Electron gas Gallium nitride Gallium nitrides HEMTs MODFETs non-reciprocal Reciprocity Sound transmission surface acoustic wave Surface acoustic waves two-dimensional electron gas
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