Non-Reciprocal Acoustic Transmission in a GaN Delay Line Using the Acoustoelectric Effect
This letter reports on first-time demonstration of non-reciprocal acoustic transmission in a gallium nitride (GaN) delay line structure. The split of forward (S21) and backward (S12) transmissions is observed by applying a dc electric field through the active area with a two-dimensional electron gas...
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| Veröffentlicht in: | IEEE electron device letters 2017-06, Vol.38 (6), p.802-805 |
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| container_title | IEEE electron device letters |
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| creator | Zhu, Haoshen Rais-Zadeh, Mina |
| description | This letter reports on first-time demonstration of non-reciprocal acoustic transmission in a gallium nitride (GaN) delay line structure. The split of forward (S21) and backward (S12) transmissions is observed by applying a dc electric field through the active area with a two-dimensional electron gas (2DEG) sheet. The non-reciprocity (~20.7 dB/mm max. in this letter) varies by tuning the gate voltage to deplete the 2DEG sheet carrier density, which agrees with model prediction for the interaction between 2DEG and surface acoustic waves. Our preliminary results prove the feasibility of implementing chip-scale non-reciprocal acoustic devices in a GaN platform through acoustoelectric amplification. |
| doi_str_mv | 10.1109/LED.2017.2700013 |
| format | Article |
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The split of forward (S21) and backward (S12) transmissions is observed by applying a dc electric field through the active area with a two-dimensional electron gas (2DEG) sheet. The non-reciprocity (~20.7 dB/mm max. in this letter) varies by tuning the gate voltage to deplete the 2DEG sheet carrier density, which agrees with model prediction for the interaction between 2DEG and surface acoustic waves. Our preliminary results prove the feasibility of implementing chip-scale non-reciprocal acoustic devices in a GaN platform through acoustoelectric amplification.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2017.2700013</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Acoustoelectric effect ; Carrier density ; Delay ; Delay lines ; Electron gas ; Gallium nitride ; Gallium nitrides ; HEMTs ; MODFETs ; non-reciprocal ; Reciprocity ; Sound transmission ; surface acoustic wave ; Surface acoustic waves ; two-dimensional electron gas</subject><ispartof>IEEE electron device letters, 2017-06, Vol.38 (6), p.802-805</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-5b45a9a618d5c51c9f495b75c78e0198feca1e134a8418cd9d3ce4a8e9417aa33</citedby><cites>FETCH-LOGICAL-c291t-5b45a9a618d5c51c9f495b75c78e0198feca1e134a8418cd9d3ce4a8e9417aa33</cites><orcidid>0000-0001-7972-4789</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7915693$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7915693$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhu, Haoshen</creatorcontrib><creatorcontrib>Rais-Zadeh, Mina</creatorcontrib><title>Non-Reciprocal Acoustic Transmission in a GaN Delay Line Using the Acoustoelectric Effect</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This letter reports on first-time demonstration of non-reciprocal acoustic transmission in a gallium nitride (GaN) delay line structure. The split of forward (S21) and backward (S12) transmissions is observed by applying a dc electric field through the active area with a two-dimensional electron gas (2DEG) sheet. The non-reciprocity (~20.7 dB/mm max. in this letter) varies by tuning the gate voltage to deplete the 2DEG sheet carrier density, which agrees with model prediction for the interaction between 2DEG and surface acoustic waves. Our preliminary results prove the feasibility of implementing chip-scale non-reciprocal acoustic devices in a GaN platform through acoustoelectric amplification.</description><subject>Acoustoelectric effect</subject><subject>Carrier density</subject><subject>Delay</subject><subject>Delay lines</subject><subject>Electron gas</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>HEMTs</subject><subject>MODFETs</subject><subject>non-reciprocal</subject><subject>Reciprocity</subject><subject>Sound transmission</subject><subject>surface acoustic wave</subject><subject>Surface acoustic waves</subject><subject>two-dimensional electron gas</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFLAzEQRoMoWKt3wUvA89bMJtlsjqWtVVgqSHvwFNJ0VlO2uzXZHvrvTWnxNDPwvhnmEfIIbATA9Es1m45yBmqUK8YY8CsyACnLjMmCX5MBUwIyDqy4JXcxbhMhhBID8rXo2uwTnd-HztmGjl13iL13dBlsG3c-Rt-11LfU0rld0Ck29kgr3yJdRd9-0_4HL5kOG3R9SNFZXafuntzUton4cKlDsnqdLSdvWfUxf5-Mq8zlGvpMroW02hZQbqST4HQttFwr6VSJDHSZVllA4MKWAkq30RvuMA2oBShrOR-S5_Pe9MHvAWNvtt0htOmkAc3yXMmcF4liZ8qFLsaAtdkHv7PhaICZk0CTBJqTQHMRmCJP54hHxH9caZCF5vwPzchrXg</recordid><startdate>20170601</startdate><enddate>20170601</enddate><creator>Zhu, Haoshen</creator><creator>Rais-Zadeh, Mina</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Acoustoelectric effect Carrier density Delay Delay lines Electron gas Gallium nitride Gallium nitrides HEMTs MODFETs non-reciprocal Reciprocity Sound transmission surface acoustic wave Surface acoustic waves two-dimensional electron gas |
| title | Non-Reciprocal Acoustic Transmission in a GaN Delay Line Using the Acoustoelectric Effect |
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