High-Performance GaN-Based LEDs With AZO/ITO Thin Films as Transparent Contact Layers

The Al-doped ZnO (AZO)/indium tin oxide (ITO) bilayer films were proposed as transparent contact layers (TCLs) for the fabrication of GaN-based light-emitting diodes (LEDs). In TCLs on the p-type GaN layer, the ITO film serves as the ohmic contact layer with the thickness of only 20 nm, whereas the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2017-06, Vol.64 (6), p.2549-2555
Hauptverfasser:	Chen, Dan, Lu, Jianguo, Lu, Rongkai, Chen, Lingxiang, Ye, Zhizhen
Format:	Artikel
Sprache:	eng
Schlagworte:	Al-doped ZnO (AZO)/indium tin oxide (ITO) bilayer films Conductivity Fabrication Gallium nitride GaN-based light-emitting diodes (LEDs) Indium tin oxide indium-saving approach Light emitting diodes Metals Ohmic contacts transparent contact layer (TCL)
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!