Small VCO-Gain Variation Adding a Bias-Shifted Inversion-Mode MOS Varactor
This letter proposes a small voltage-controlled oscillator (VCO)-gain variation (AKVCO) technique using the capacitance-slope change of the varactor, which is achieved by adding a bias-shifted inversion-mode MOS varactor in parallel with a conventional accumulation-mode MOS varactor. This technique...
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Veröffentlicht in: | IEEE microwave and wireless components letters 2017-04, Vol.27 (4), p.395-397 |
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creator | Lim, Chang-Woo Noh, Hong-Yeoul Yun, Tae-Yeoul |
description | This letter proposes a small voltage-controlled oscillator (VCO)-gain variation (AKVCO) technique using the capacitance-slope change of the varactor, which is achieved by adding a bias-shifted inversion-mode MOS varactor in parallel with a conventional accumulation-mode MOS varactor. This technique is investigated via theoretical analysis, which is confirmed by simulation and measurement. The proposed VCO shows a phase noise of -116.4 dBc/Hz at a 1-MHz offset frequency at 2.36 GHz, a figure of merit of -185 dBc/Hz, and a AKVCO of less than 8.6% over a frequency tuning range from 1.73 to 2.36 GHz while consuming 0.76 mW from a 0.8-V supply voltage. It was implemented using a 110-nm CMOS process with a chip area of 0.95 mm 2 . |
doi_str_mv | 10.1109/LMWC.2017.2678431 |
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This technique is investigated via theoretical analysis, which is confirmed by simulation and measurement. The proposed VCO shows a phase noise of -116.4 dBc/Hz at a 1-MHz offset frequency at 2.36 GHz, a figure of merit of -185 dBc/Hz, and a AKVCO of less than 8.6% over a frequency tuning range from 1.73 to 2.36 GHz while consuming 0.76 mW from a 0.8-V supply voltage. It was implemented using a 110-nm CMOS process with a chip area of 0.95 mm 2 .</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2017.2678431</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bias ; Capacitance ; CMOS ; Electric potential ; Figure of merit ; Inversion-mode MOS (I-MOS) varactor ; Phase locked loops ; Phase noise ; Tuning ; Varactors ; VCO-gain variation (ΔKVCO) ; Voltage controlled oscillators ; voltage-controlled oscillator (VCO) gain (KVCO)</subject><ispartof>IEEE microwave and wireless components letters, 2017-04, Vol.27 (4), p.395-397</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-8f706e599affd335f46fe897b0b30424ac0c1cd1b1e7b0b5c383c7418da6b3723</citedby><cites>FETCH-LOGICAL-c359t-8f706e599affd335f46fe897b0b30424ac0c1cd1b1e7b0b5c383c7418da6b3723</cites><orcidid>0000-0003-3470-5693</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7884979$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7884979$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lim, Chang-Woo</creatorcontrib><creatorcontrib>Noh, Hong-Yeoul</creatorcontrib><creatorcontrib>Yun, Tae-Yeoul</creatorcontrib><title>Small VCO-Gain Variation Adding a Bias-Shifted Inversion-Mode MOS Varactor</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>This letter proposes a small voltage-controlled oscillator (VCO)-gain variation (AKVCO) technique using the capacitance-slope change of the varactor, which is achieved by adding a bias-shifted inversion-mode MOS varactor in parallel with a conventional accumulation-mode MOS varactor. This technique is investigated via theoretical analysis, which is confirmed by simulation and measurement. The proposed VCO shows a phase noise of -116.4 dBc/Hz at a 1-MHz offset frequency at 2.36 GHz, a figure of merit of -185 dBc/Hz, and a AKVCO of less than 8.6% over a frequency tuning range from 1.73 to 2.36 GHz while consuming 0.76 mW from a 0.8-V supply voltage. It was implemented using a 110-nm CMOS process with a chip area of 0.95 mm 2 .</description><subject>Bias</subject><subject>Capacitance</subject><subject>CMOS</subject><subject>Electric potential</subject><subject>Figure of merit</subject><subject>Inversion-mode MOS (I-MOS) varactor</subject><subject>Phase locked loops</subject><subject>Phase noise</subject><subject>Tuning</subject><subject>Varactors</subject><subject>VCO-gain variation (ΔKVCO)</subject><subject>Voltage controlled oscillators</subject><subject>voltage-controlled oscillator (VCO) gain (KVCO)</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kFFLwzAQx4MoOKcfQHwp-Jyaa9ImeZxF52RjD9P5GNI00YytnUkn-O1t2fDpjrvf_w5-CN0CSQGIfJgvPso0I8DTrOCCUThDI8hzgYEX7HzoKWCgRF6iqxg3hAATDEbodbXT222yLpd4qn2TrHXwuvNtk0zq2jefiU4evY549eVdZ-tk1vzYEPs9XrS1TRbL1RDRpmvDNbpwehvtzamO0fvz01v5gufL6ayczLGhueywcJwUNpdSO1dTmjtWOCskr0hFCcuYNsSAqaECO8xyQwU1nIGodVFRntExuj_e3Yf2-2BjpzbtITT9SwVCCMKYANlTcKRMaGMM1ql98DsdfhUQNShTgzI1KFMnZX3m7pjx1tp_ngvBJJf0D5YAZdA</recordid><startdate>20170401</startdate><enddate>20170401</enddate><creator>Lim, Chang-Woo</creator><creator>Noh, Hong-Yeoul</creator><creator>Yun, Tae-Yeoul</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3470-5693</orcidid></search><sort><creationdate>20170401</creationdate><title>Small VCO-Gain Variation Adding a Bias-Shifted Inversion-Mode MOS Varactor</title><author>Lim, Chang-Woo ; Noh, Hong-Yeoul ; Yun, Tae-Yeoul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-8f706e599affd335f46fe897b0b30424ac0c1cd1b1e7b0b5c383c7418da6b3723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Bias</topic><topic>Capacitance</topic><topic>CMOS</topic><topic>Electric potential</topic><topic>Figure of merit</topic><topic>Inversion-mode MOS (I-MOS) varactor</topic><topic>Phase locked loops</topic><topic>Phase noise</topic><topic>Tuning</topic><topic>Varactors</topic><topic>VCO-gain variation (ΔKVCO)</topic><topic>Voltage controlled oscillators</topic><topic>voltage-controlled oscillator (VCO) gain (KVCO)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lim, Chang-Woo</creatorcontrib><creatorcontrib>Noh, Hong-Yeoul</creatorcontrib><creatorcontrib>Yun, Tae-Yeoul</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lim, Chang-Woo</au><au>Noh, Hong-Yeoul</au><au>Yun, Tae-Yeoul</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Small VCO-Gain Variation Adding a Bias-Shifted Inversion-Mode MOS Varactor</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2017-04-01</date><risdate>2017</risdate><volume>27</volume><issue>4</issue><spage>395</spage><epage>397</epage><pages>395-397</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>This letter proposes a small voltage-controlled oscillator (VCO)-gain variation (AKVCO) technique using the capacitance-slope change of the varactor, which is achieved by adding a bias-shifted inversion-mode MOS varactor in parallel with a conventional accumulation-mode MOS varactor. This technique is investigated via theoretical analysis, which is confirmed by simulation and measurement. The proposed VCO shows a phase noise of -116.4 dBc/Hz at a 1-MHz offset frequency at 2.36 GHz, a figure of merit of -185 dBc/Hz, and a AKVCO of less than 8.6% over a frequency tuning range from 1.73 to 2.36 GHz while consuming 0.76 mW from a 0.8-V supply voltage. It was implemented using a 110-nm CMOS process with a chip area of 0.95 mm 2 .</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LMWC.2017.2678431</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0003-3470-5693</orcidid></addata></record> |
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source | IEEE Electronic Library (IEL) |
subjects | Bias Capacitance CMOS Electric potential Figure of merit Inversion-mode MOS (I-MOS) varactor Phase locked loops Phase noise Tuning Varactors VCO-gain variation (ΔKVCO) Voltage controlled oscillators voltage-controlled oscillator (VCO) gain (KVCO) |
title | Small VCO-Gain Variation Adding a Bias-Shifted Inversion-Mode MOS Varactor |
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