Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer

One of the biggest issues with GaN-based hydrogen sensors is their sensitivity to humidity in the ambient. We demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly(methyl methacrylate) (PMMA) provides effective mitigation of the effects of water. Without PMMA encapsulation, the abs...

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Veröffentlicht in:	IEEE electron device letters 2017-05, Vol.38 (5), p.657-660
Hauptverfasser:	Sunwoo Jung, Kwang Hyeon Baik, Fan Ren, Pearton, Stephen J., Soohwan Jang
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Gallium nitride GaN Hydrogen Moisture barrier Schottky diodes Sensitivity sensor Wide band gap semiconductors
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