Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer
One of the biggest issues with GaN-based hydrogen sensors is their sensitivity to humidity in the ambient. We demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly(methyl methacrylate) (PMMA) provides effective mitigation of the effects of water. Without PMMA encapsulation, the abs...
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| Veröffentlicht in: | IEEE electron device letters 2017-05, Vol.38 (5), p.657-660 |
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| container_title | IEEE electron device letters |
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| creator | Sunwoo Jung Kwang Hyeon Baik Fan Ren Pearton, Stephen J. Soohwan Jang |
| description | One of the biggest issues with GaN-based hydrogen sensors is their sensitivity to humidity in the ambient. We demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly(methyl methacrylate) (PMMA) provides effective mitigation of the effects of water. Without PMMA encapsulation, the absolute current signal for detection of 500 ppm of H 2 was decreased by a factor of 8 in the presence of water. By sharp contrast, encapsulated diodes show no decrease in response in the presence of water. The relative current changes are of the order 2.8 × 10 5 % when 500 ppm H 2 is introduced to the surface of bare or PMMA encapsulated diodes in the absence of water or to encapsulated diode in the presence of water. Detection limits of ~100 ppm H 2 (0.01% by volume) were obtained with standard forward bias detection mode at 1.3 V. |
| doi_str_mv | 10.1109/LED.2017.2681114 |
| format | Article |
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We demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly(methyl methacrylate) (PMMA) provides effective mitigation of the effects of water. Without PMMA encapsulation, the absolute current signal for detection of 500 ppm of H 2 was decreased by a factor of 8 in the presence of water. By sharp contrast, encapsulated diodes show no decrease in response in the presence of water. The relative current changes are of the order 2.8 × 10 5 % when 500 ppm H 2 is introduced to the surface of bare or PMMA encapsulated diodes in the absence of water or to encapsulated diode in the presence of water. 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We demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly(methyl methacrylate) (PMMA) provides effective mitigation of the effects of water. Without PMMA encapsulation, the absolute current signal for detection of 500 ppm of H 2 was decreased by a factor of 8 in the presence of water. By sharp contrast, encapsulated diodes show no decrease in response in the presence of water. The relative current changes are of the order 2.8 × 10 5 % when 500 ppm H 2 is introduced to the surface of bare or PMMA encapsulated diodes in the absence of water or to encapsulated diode in the presence of water. Detection limits of ~100 ppm H 2 (0.01% by volume) were obtained with standard forward bias detection mode at 1.3 V.</description><subject>Aluminum gallium nitride</subject><subject>Gallium nitride</subject><subject>GaN</subject><subject>Hydrogen</subject><subject>Moisture barrier</subject><subject>Schottky diodes</subject><subject>Sensitivity</subject><subject>sensor</subject><subject>Wide band gap semiconductors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9j01Lw0AURQdRMFb3gpv5A5O-Nx-ZCa5ira2QakGly5BMJjUaE5lkk39vSouLy93cc-EQcosQIkI8T5ePIQfUIY8MIsozEqBShoGKxDkJQEtkAiG6JFd9_wWAUmoZkPvtwJJmlb_Mp9D1WPpu71r65tq-83RXD590lw_Os4ems991u6fbzSahaT46f00uqrzp3c2pZ-Tjafm-WLP0dfW8SFJmeSQGhuBKGYOxQvPY6LLQ0lTaFjaKylwWlmsu0TpZciNFhUY4DsJwgaiMAGXFjMDx1_qu772rsl9f_-R-zBCyg3w2yWcH-ewkPyF3R6R2zv3PtdFKoRJ_i_dSXw</recordid><startdate>201705</startdate><enddate>201705</enddate><creator>Sunwoo Jung</creator><creator>Kwang Hyeon Baik</creator><creator>Fan Ren</creator><creator>Pearton, Stephen J.</creator><creator>Soohwan Jang</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-8188-6274</orcidid></search><sort><creationdate>201705</creationdate><title>Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer</title><author>Sunwoo Jung ; Kwang Hyeon Baik ; Fan Ren ; Pearton, Stephen J. ; Soohwan Jang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-10ed4908c372987db748f7cbc66da4bc27241ce4d2843f183e2038231158305c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum gallium nitride</topic><topic>Gallium nitride</topic><topic>GaN</topic><topic>Hydrogen</topic><topic>Moisture barrier</topic><topic>Schottky diodes</topic><topic>Sensitivity</topic><topic>sensor</topic><topic>Wide band gap semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sunwoo Jung</creatorcontrib><creatorcontrib>Kwang Hyeon Baik</creatorcontrib><creatorcontrib>Fan Ren</creatorcontrib><creatorcontrib>Pearton, Stephen J.</creatorcontrib><creatorcontrib>Soohwan Jang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sunwoo Jung</au><au>Kwang Hyeon Baik</au><au>Fan Ren</au><au>Pearton, Stephen J.</au><au>Soohwan Jang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2017-05</date><risdate>2017</risdate><volume>38</volume><issue>5</issue><spage>657</spage><epage>660</epage><pages>657-660</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>One of the biggest issues with GaN-based hydrogen sensors is their sensitivity to humidity in the ambient. We demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly(methyl methacrylate) (PMMA) provides effective mitigation of the effects of water. Without PMMA encapsulation, the absolute current signal for detection of 500 ppm of H 2 was decreased by a factor of 8 in the presence of water. By sharp contrast, encapsulated diodes show no decrease in response in the presence of water. The relative current changes are of the order 2.8 × 10 5 % when 500 ppm H 2 is introduced to the surface of bare or PMMA encapsulated diodes in the absence of water or to encapsulated diode in the presence of water. Detection limits of ~100 ppm H 2 (0.01% by volume) were obtained with standard forward bias detection mode at 1.3 V.</abstract><pub>IEEE</pub><doi>10.1109/LED.2017.2681114</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-8188-6274</orcidid></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum gallium nitride Gallium nitride GaN Hydrogen Moisture barrier Schottky diodes Sensitivity sensor Wide band gap semiconductors |
| title | Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer |
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