Step like degradation profile of electromigration of W-plug contact
The electromigration (EM) of a W-plug contact to silicon has been investigated by high resolution resistance measurement (HRRM). Step-like resistance degradation curves was observed in EM tests. Scanning electron microscope (SEM) observation shows that the number of voids observed in the Al stripe h...
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| creator | Guo Qiang Lo Keng Foo Zeng Xu Neo Soh Ping Yao Pei Oh Chong Khiam |
| description | The electromigration (EM) of a W-plug contact to silicon has been investigated by high resolution resistance measurement (HRRM). Step-like resistance degradation curves was observed in EM tests. Scanning electron microscope (SEM) observation shows that the number of voids observed in the Al stripe has a good correlation with that of steps in the degradation profile. A new model was developed to associate the microstructure change to the resistance variation. It was found that each step corresponds to one void completely severing the line. We also showed that the interfacial diffusion is a dominant mechanism of bamboo structures in EM measurements. |
| doi_str_mv | 10.1109/IITC.1999.787073 |
| format | Conference Proceeding |
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Step-like resistance degradation curves was observed in EM tests. Scanning electron microscope (SEM) observation shows that the number of voids observed in the Al stripe has a good correlation with that of steps in the degradation profile. A new model was developed to associate the microstructure change to the resistance variation. It was found that each step corresponds to one void completely severing the line. We also showed that the interfacial diffusion is a dominant mechanism of bamboo structures in EM measurements.</description><identifier>ISBN: 0780351746</identifier><identifier>ISBN: 9780780351745</identifier><identifier>DOI: 10.1109/IITC.1999.787073</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Conductors ; Degradation ; Design. Technologies. Operation analysis. Testing ; Electrical resistance measurement ; Electromigration ; Electronic equipment and fabrication. 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No.99EX247)</title><addtitle>IITC</addtitle><description>The electromigration (EM) of a W-plug contact to silicon has been investigated by high resolution resistance measurement (HRRM). Step-like resistance degradation curves was observed in EM tests. Scanning electron microscope (SEM) observation shows that the number of voids observed in the Al stripe has a good correlation with that of steps in the degradation profile. A new model was developed to associate the microstructure change to the resistance variation. It was found that each step corresponds to one void completely severing the line. We also showed that the interfacial diffusion is a dominant mechanism of bamboo structures in EM measurements.</description><subject>Applied sciences</subject><subject>Conductors</subject><subject>Degradation</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electrical resistance measurement</subject><subject>Electromigration</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuit interconnections</subject><subject>Integrated circuits</subject><subject>Metallization, contacts, interconnects; device isolation</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology</subject><subject>Microstructure</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Temperature</subject><subject>Testing</subject><isbn>0780351746</isbn><isbn>9780780351745</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9kEFLxDAUhAMiqOvexVMOXrvmNUlfcpSibmHBgyselzR5XaLZtrT14L-3WHEuA_MNcxjGbkBsAIS9r6p9uQFr7QYNCpRn7EqgEVIDquKCrcfxQ8xSWqG0l6x8najnKX4SD3QcXHBT7FreD10TE_Gu4ZTIT0N3ijP9ZXP2nvXp68h9107OT9fsvHFppPWfr9jb0-O-3Ga7l-eqfNhlEaCYMocYCmUVgnQ51pD7YCE3YHSNRSCDioKgQhgtfdB1DTKovLGojJLWByVX7G7Z7d3oXWoG1_o4HvohntzwfQAtMUc9126XWiSif7q8IX8AYUBUWA</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Guo Qiang</creator><creator>Lo Keng Foo</creator><creator>Zeng Xu</creator><creator>Neo Soh Ping</creator><creator>Yao Pei</creator><creator>Oh Chong Khiam</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>IQODW</scope></search><sort><creationdate>1999</creationdate><title>Step like degradation profile of electromigration of W-plug contact</title><author>Guo Qiang ; Lo Keng Foo ; Zeng Xu ; Neo Soh Ping ; Yao Pei ; Oh Chong Khiam</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i116t-a77d6494713a27b12cd9128185b76de874ed0e60853cd5bb13d42f9748439cd43</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Applied sciences</topic><topic>Conductors</topic><topic>Degradation</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electrical resistance measurement</topic><topic>Electromigration</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuit interconnections</topic><topic>Integrated circuits</topic><topic>Metallization, contacts, interconnects; device isolation</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology</topic><topic>Microstructure</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Temperature</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Guo Qiang</creatorcontrib><creatorcontrib>Lo Keng Foo</creatorcontrib><creatorcontrib>Zeng Xu</creatorcontrib><creatorcontrib>Neo Soh Ping</creatorcontrib><creatorcontrib>Yao Pei</creatorcontrib><creatorcontrib>Oh Chong Khiam</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Guo Qiang</au><au>Lo Keng Foo</au><au>Zeng Xu</au><au>Neo Soh Ping</au><au>Yao Pei</au><au>Oh Chong Khiam</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Step like degradation profile of electromigration of W-plug contact</atitle><btitle>Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. 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| identifier | ISBN: 0780351746 |
| ispartof | Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247), 1999, p.44-46 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Conductors Degradation Design. Technologies. Operation analysis. Testing Electrical resistance measurement Electromigration Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Integrated circuit interconnections Integrated circuits Metallization, contacts, interconnects device isolation Microelectronic fabrication (materials and surfaces technology) Microelectronics: LSI, VLSI, ULSI integrated circuit fabrication technology Microstructure Scanning electron microscopy Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Temperature Testing |
| title | Step like degradation profile of electromigration of W-plug contact |
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