Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures

Thin-film lateral SOI p-i-n diodes can be used as photodetectors especially in the wavelength range of blue and ultra-violet (UV) radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where the absorption of low-wavelengths radiation takes pl...

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Veröffentlicht in:	IEEE sensors journal 2017-03, Vol.17 (6), p.1641-1648
Hauptverfasser:	Novo, Carla, Buhler, Rudolf, Baptista, Joao, Giacomini, Renato, Afzalian, Aryan, Flandre, Denis
Format:	Artikel
Sprache:	eng
Schlagworte:	Dark current Fingers intrinsic length Photodiode Photometers photosensitive PIN PIN diodes PIN photodiodes Pins Quantum efficiency Radiative recombination Silicon Temperature measurement
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