Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications

Next-generation power amplifiers must operate at lower supply voltages without sacrificing linearity or efficiency. GaInP/GaAs double-heterojunction bipolar transistors with GaInP collectors can improve over GaAs single-heterojunction bipolar transistors (HBTs) in power-amplifier applications, based...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 1999-08, Vol.47 (8), p.1433-1438
Hauptverfasser:	Pin-Fan Chen, Hsin, U.-M.T., Welty, R.J., Asbeck, P.M., Pierson, R.L., Zampardi, P.J., Ho, W.-J., Vincent Ho, M.C., Chang, M.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bipolar transistors Breakdown voltage Costs Electric fields Electric potential Gallium arsenide Gallium arsenides Linearity Manufacturing Microwave devices Power amplifiers Semiconductor devices Thermal management Voltage Wireless communication
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