High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

This letter demonstrates quasi- and fully vertical GaN-on-Si pn diodes with record performance. The optimized device structure employs a highly conductive (N D >10 20 cm -3 ) current collecting layer and a lightly carbon-doped drift layer. With this optimization, a differential specific on-resist...

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Veröffentlicht in:	IEEE electron device letters 2017-02, Vol.38 (2), p.248-251
Hauptverfasser:	Yuhao Zhang, Piedra, Daniel, Min Sun, Hennig, Jonas, Dadgar, Armin, Lili Yu, Palacios, Tomas
Format:	Artikel
Sprache:	eng
Schlagworte:	Gallium nitride GaN-on-Si high breakdown voltage high forward current high-temperature operation Leakage currents low on-resistance P-i-n diodes Performance evaluation power electronics reverse recovery time Schottky diodes Silicon Substrates vertical pn diodes
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