Resistive FET mixer conversion loss and IMD optimization by selective drain bias
This paper describes a dedicated nonlinear MESFET model extraction technique, which was used to accurately characterize the device's channel resistance nonlinearity. Plotting Ids(Vgs,Vds) Taylor series expansion coefficients across V/sub GS/ and V/sub DS/ revealed not only the presence of impor...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 806 vol.2 |
|---|---|
| container_issue | |
| container_start_page | 803 |
| container_title | |
| container_volume | 2 |
| creator | Garcia, J.A. Pedro, J.C. De la Fuente, M.L. Carvalho, N.B. Mediavilla, A. Tazon, A. |
| description | This paper describes a dedicated nonlinear MESFET model extraction technique, which was used to accurately characterize the device's channel resistance nonlinearity. Plotting Ids(Vgs,Vds) Taylor series expansion coefficients across V/sub GS/ and V/sub DS/ revealed not only the presence of important minimum conversion loss bias, but also of in-band IMD sweet spots that were then used to optimize a FET resistive mixer performance. |
| doi_str_mv | 10.1109/MWSYM.1999.779881 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_6IE</sourceid><recordid>TN_cdi_ieee_primary_779881</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>779881</ieee_id><sourcerecordid>27099531</sourcerecordid><originalsourceid>FETCH-LOGICAL-i203t-589bfff16ad3855db2b1eec0fa3451a4e24766877082b1c8e6709813530f61f93</originalsourceid><addsrcrecordid>eNotkEtPwzAQhC0BEqX0B8DJJ24pdmzH9hEVCpVagXgIOEVOspaM8ijZtKL8egxlLyvtfDPSLCFnnE05Z_Zy9fr0vppya-1Ua2sMPyAnTBsmFBdKHZIR49ImmVRvx2SC-MHiSCW1ECPy8AgYcAhboPObZ9qEL-hp2bVb6DF0La07ROraii5W17RbD6EJ3274VYodRaih_PNWvQvxFByekiPvaoTJ_x6Tlxg8u0uW97eL2dUyCSkTQ6KMLbz3PHOVMEpVRVpwgJJ5J6TiTkIqdZYZrZmJSmkg08ya2Ecwn3FvxZhc7HPXffe5ARzyJmAJde1a6DaYp5G3SvAInu_BAAD5ug-N63f5_lHiB0_fXEQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>27099531</pqid></control><display><type>conference_proceeding</type><title>Resistive FET mixer conversion loss and IMD optimization by selective drain bias</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Garcia, J.A. ; Pedro, J.C. ; De la Fuente, M.L. ; Carvalho, N.B. ; Mediavilla, A. ; Tazon, A.</creator><creatorcontrib>Garcia, J.A. ; Pedro, J.C. ; De la Fuente, M.L. ; Carvalho, N.B. ; Mediavilla, A. ; Tazon, A.</creatorcontrib><description>This paper describes a dedicated nonlinear MESFET model extraction technique, which was used to accurately characterize the device's channel resistance nonlinearity. Plotting Ids(Vgs,Vds) Taylor series expansion coefficients across V/sub GS/ and V/sub DS/ revealed not only the presence of important minimum conversion loss bias, but also of in-band IMD sweet spots that were then used to optimize a FET resistive mixer performance.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 0780351355</identifier><identifier>ISBN: 9780780351356</identifier><identifier>DOI: 10.1109/MWSYM.1999.779881</identifier><language>eng</language><publisher>IEEE</publisher><subject>Dynamic range ; FETs ; Intrusion detection ; Linearity ; MESFET circuits ; Microwave circuits ; Microwave devices ; Microwave theory and techniques ; Switches ; Voltage</subject><ispartof>1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.2, p.803-806 vol.2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/779881$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,4051,4052,27930,54925</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/779881$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Garcia, J.A.</creatorcontrib><creatorcontrib>Pedro, J.C.</creatorcontrib><creatorcontrib>De la Fuente, M.L.</creatorcontrib><creatorcontrib>Carvalho, N.B.</creatorcontrib><creatorcontrib>Mediavilla, A.</creatorcontrib><creatorcontrib>Tazon, A.</creatorcontrib><title>Resistive FET mixer conversion loss and IMD optimization by selective drain bias</title><title>1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)</title><addtitle>MWSYM</addtitle><description>This paper describes a dedicated nonlinear MESFET model extraction technique, which was used to accurately characterize the device's channel resistance nonlinearity. Plotting Ids(Vgs,Vds) Taylor series expansion coefficients across V/sub GS/ and V/sub DS/ revealed not only the presence of important minimum conversion loss bias, but also of in-band IMD sweet spots that were then used to optimize a FET resistive mixer performance.</description><subject>Dynamic range</subject><subject>FETs</subject><subject>Intrusion detection</subject><subject>Linearity</subject><subject>MESFET circuits</subject><subject>Microwave circuits</subject><subject>Microwave devices</subject><subject>Microwave theory and techniques</subject><subject>Switches</subject><subject>Voltage</subject><issn>0149-645X</issn><isbn>0780351355</isbn><isbn>9780780351356</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkEtPwzAQhC0BEqX0B8DJJ24pdmzH9hEVCpVagXgIOEVOspaM8ijZtKL8egxlLyvtfDPSLCFnnE05Z_Zy9fr0vppya-1Ua2sMPyAnTBsmFBdKHZIR49ImmVRvx2SC-MHiSCW1ECPy8AgYcAhboPObZ9qEL-hp2bVb6DF0La07ROraii5W17RbD6EJ3274VYodRaih_PNWvQvxFByekiPvaoTJ_x6Tlxg8u0uW97eL2dUyCSkTQ6KMLbz3PHOVMEpVRVpwgJJ5J6TiTkIqdZYZrZmJSmkg08ya2Ecwn3FvxZhc7HPXffe5ARzyJmAJde1a6DaYp5G3SvAInu_BAAD5ug-N63f5_lHiB0_fXEQ</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Garcia, J.A.</creator><creator>Pedro, J.C.</creator><creator>De la Fuente, M.L.</creator><creator>Carvalho, N.B.</creator><creator>Mediavilla, A.</creator><creator>Tazon, A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1999</creationdate><title>Resistive FET mixer conversion loss and IMD optimization by selective drain bias</title><author>Garcia, J.A. ; Pedro, J.C. ; De la Fuente, M.L. ; Carvalho, N.B. ; Mediavilla, A. ; Tazon, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-589bfff16ad3855db2b1eec0fa3451a4e24766877082b1c8e6709813530f61f93</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Dynamic range</topic><topic>FETs</topic><topic>Intrusion detection</topic><topic>Linearity</topic><topic>MESFET circuits</topic><topic>Microwave circuits</topic><topic>Microwave devices</topic><topic>Microwave theory and techniques</topic><topic>Switches</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Garcia, J.A.</creatorcontrib><creatorcontrib>Pedro, J.C.</creatorcontrib><creatorcontrib>De la Fuente, M.L.</creatorcontrib><creatorcontrib>Carvalho, N.B.</creatorcontrib><creatorcontrib>Mediavilla, A.</creatorcontrib><creatorcontrib>Tazon, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Garcia, J.A.</au><au>Pedro, J.C.</au><au>De la Fuente, M.L.</au><au>Carvalho, N.B.</au><au>Mediavilla, A.</au><au>Tazon, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Resistive FET mixer conversion loss and IMD optimization by selective drain bias</atitle><btitle>1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)</btitle><stitle>MWSYM</stitle><date>1999</date><risdate>1999</risdate><volume>2</volume><spage>803</spage><epage>806 vol.2</epage><pages>803-806 vol.2</pages><issn>0149-645X</issn><isbn>0780351355</isbn><isbn>9780780351356</isbn><abstract>This paper describes a dedicated nonlinear MESFET model extraction technique, which was used to accurately characterize the device's channel resistance nonlinearity. Plotting Ids(Vgs,Vds) Taylor series expansion coefficients across V/sub GS/ and V/sub DS/ revealed not only the presence of important minimum conversion loss bias, but also of in-band IMD sweet spots that were then used to optimize a FET resistive mixer performance.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1999.779881</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0149-645X |
| ispartof | 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.2, p.803-806 vol.2 |
| issn | 0149-645X |
| language | eng |
| recordid | cdi_ieee_primary_779881 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Dynamic range FETs Intrusion detection Linearity MESFET circuits Microwave circuits Microwave devices Microwave theory and techniques Switches Voltage |
| title | Resistive FET mixer conversion loss and IMD optimization by selective drain bias |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-11T12%3A46%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Resistive%20FET%20mixer%20conversion%20loss%20and%20IMD%20optimization%20by%20selective%20drain%20bias&rft.btitle=1999%20IEEE%20MTT-S%20International%20Microwave%20Symposium%20Digest%20(Cat.%20No.99CH36282)&rft.au=Garcia,%20J.A.&rft.date=1999&rft.volume=2&rft.spage=803&rft.epage=806%20vol.2&rft.pages=803-806%20vol.2&rft.issn=0149-645X&rft.isbn=0780351355&rft.isbn_list=9780780351356&rft_id=info:doi/10.1109/MWSYM.1999.779881&rft_dat=%3Cproquest_6IE%3E27099531%3C/proquest_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27099531&rft_id=info:pmid/&rft_ieee_id=779881&rfr_iscdi=true |