Resistive FET mixer conversion loss and IMD optimization by selective drain bias

Resistive FET mixer conversion loss and IMD optimization by selective drain bias

This paper describes a dedicated nonlinear MESFET model extraction technique, which was used to accurately characterize the device's channel resistance nonlinearity. Plotting Ids(Vgs,Vds) Taylor series expansion coefficients across V/sub GS/ and V/sub DS/ revealed not only the presence of impor...

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Hauptverfasser: Garcia, J.A., Pedro, J.C., De la Fuente, M.L., Carvalho, N.B., Mediavilla, A., Tazon, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dynamic range
FETs
Intrusion detection
Linearity
MESFET circuits
Microwave circuits
Microwave devices
Microwave theory and techniques
Switches
Voltage
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Beschreibung
Zusammenfassung:This paper describes a dedicated nonlinear MESFET model extraction technique, which was used to accurately characterize the device's channel resistance nonlinearity. Plotting Ids(Vgs,Vds) Taylor series expansion coefficients across V/sub GS/ and V/sub DS/ revealed not only the presence of important minimum conversion loss bias, but also of in-band IMD sweet spots that were then used to optimize a FET resistive mixer performance.
ISSN:0149-645X
DOI:10.1109/MWSYM.1999.779881