Long-term stability of passive millimeterwave circuits on high-resistivity silicon substrates
We investigate the long-term performance of passive millimeterwave microstrip circuits on high resistivity silicon substrates. Three types of test structures were exposed to harsh environmental conditions such as thermal stress, humidity and organic vapors for 400 hours. Measured results at 38 GHz s...
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| creator | Rasshofer, R.H. Biebl, E.M. Strohm, K.M. Luy, J.F. |
| description | We investigate the long-term performance of passive millimeterwave microstrip circuits on high resistivity silicon substrates. Three types of test structures were exposed to harsh environmental conditions such as thermal stress, humidity and organic vapors for 400 hours. Measured results at 38 GHz showed excellent long-term stability of the circuits. No significant difference between chips with and without SiO/sub 2/ passivation layer has been found though chips with passivation showed larger photosensitivity and higher loss. |
| doi_str_mv | 10.1109/MWSYM.1999.779830 |
| format | Conference Proceeding |
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No significant difference between chips with and without SiO/sub 2/ passivation layer has been found though chips with passivation showed larger photosensitivity and higher loss.</description><subject>Circuit stability</subject><subject>Circuit testing</subject><subject>Conductivity</subject><subject>Dielectric losses</subject><subject>Dielectric substrates</subject><subject>Microstrip</subject><subject>Passivation</subject><subject>Radio frequency</subject><subject>Semiconductor device measurement</subject><subject>Silicon</subject><issn>0149-645X</issn><isbn>0780351355</isbn><isbn>9780780351356</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtOwzAQRS0BEqX0A2CVFbsUP5LaXqKKl9SKBSBggSI7tttBSVM8TlH_nqAym6vRPWcWQ8gFo1PGqL5evj1_LKdMaz2VUitBj8gZlYqKkomyPCYjygqdz4ry_ZRMEL_oMEVZSCFG5HPRbVZ58rHNMBkLDaR91oVsaxBh57MWmgZaPwA_ZlhriHUPCbNuk61htc6jR8AEuz8NB7seCuwtpmiSx3NyEkyDfvKfY_J6d_syf8gXT_eP85tFDpyKlAfFQuDGFYZZWSjLC-1CzYMLjuvgtAzMaaatEtxJo4R20iqrVCgdZzW1YkyuDne3sfvuPaaqBax905iN73qs-EwrxgUbwMsDCN77ahuhNXFfHb4mfgH1MWRn</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Rasshofer, R.H.</creator><creator>Biebl, E.M.</creator><creator>Strohm, K.M.</creator><creator>Luy, J.F.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1999</creationdate><title>Long-term stability of passive millimeterwave circuits on high-resistivity silicon substrates</title><author>Rasshofer, R.H. ; Biebl, E.M. ; Strohm, K.M. ; Luy, J.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-f81ff2ad4a1b748b249dfc2fdfd29fd97f1d919b832d7a839d7b8b88f5d21c0b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Circuit stability</topic><topic>Circuit testing</topic><topic>Conductivity</topic><topic>Dielectric losses</topic><topic>Dielectric substrates</topic><topic>Microstrip</topic><topic>Passivation</topic><topic>Radio frequency</topic><topic>Semiconductor device measurement</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Rasshofer, R.H.</creatorcontrib><creatorcontrib>Biebl, E.M.</creatorcontrib><creatorcontrib>Strohm, K.M.</creatorcontrib><creatorcontrib>Luy, J.F.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rasshofer, R.H.</au><au>Biebl, E.M.</au><au>Strohm, K.M.</au><au>Luy, J.F.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Long-term stability of passive millimeterwave circuits on high-resistivity silicon substrates</atitle><btitle>1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)</btitle><stitle>MWSYM</stitle><date>1999</date><risdate>1999</risdate><volume>2</volume><spage>585</spage><epage>588 vol.2</epage><pages>585-588 vol.2</pages><issn>0149-645X</issn><isbn>0780351355</isbn><isbn>9780780351356</isbn><abstract>We investigate the long-term performance of passive millimeterwave microstrip circuits on high resistivity silicon substrates. Three types of test structures were exposed to harsh environmental conditions such as thermal stress, humidity and organic vapors for 400 hours. Measured results at 38 GHz showed excellent long-term stability of the circuits. No significant difference between chips with and without SiO/sub 2/ passivation layer has been found though chips with passivation showed larger photosensitivity and higher loss.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1999.779830</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0149-645X |
| ispartof | 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.2, p.585-588 vol.2 |
| issn | 0149-645X |
| language | eng |
| recordid | cdi_ieee_primary_779830 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit stability Circuit testing Conductivity Dielectric losses Dielectric substrates Microstrip Passivation Radio frequency Semiconductor device measurement Silicon |
| title | Long-term stability of passive millimeterwave circuits on high-resistivity silicon substrates |
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