Generalized Kushner analysis of RF power amplifiers
A new technique that accurately predicts the output power and drain efficiency of FET power amplifiers is described. This new technique uses a generalization of Kushner's amplifier analysis method together with measured pulsed I-V data. The technique can be used to replace or supplement load-pu...
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| creator | Blakey, P.A. Johnson, E.M. |
| description | A new technique that accurately predicts the output power and drain efficiency of FET power amplifiers is described. This new technique uses a generalization of Kushner's amplifier analysis method together with measured pulsed I-V data. The technique can be used to replace or supplement load-pull measurements that are performed during technology development and circuit design. Excellent agreement with experimental load-pull measurements is demonstrated for several different transistor technologies over a broad range of load resistances. |
| doi_str_mv | 10.1109/MWSYM.1999.779815 |
| format | Conference Proceeding |
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This new technique uses a generalization of Kushner's amplifier analysis method together with measured pulsed I-V data. The technique can be used to replace or supplement load-pull measurements that are performed during technology development and circuit design. Excellent agreement with experimental load-pull measurements is demonstrated for several different transistor technologies over a broad range of load resistances.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 0780351355</identifier><identifier>ISBN: 9780780351356</identifier><identifier>DOI: 10.1109/MWSYM.1999.779815</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit synthesis ; Electrical resistance measurement ; FETs ; Performance evaluation ; Power amplifiers ; Power generation ; Pulse amplifiers ; Pulse measurements ; Radio frequency ; Radiofrequency amplifiers</subject><ispartof>1999 IEEE MTT-S International Microwave Symposium Digest (Cat. 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This new technique uses a generalization of Kushner's amplifier analysis method together with measured pulsed I-V data. The technique can be used to replace or supplement load-pull measurements that are performed during technology development and circuit design. Excellent agreement with experimental load-pull measurements is demonstrated for several different transistor technologies over a broad range of load resistances.</description><subject>Circuit synthesis</subject><subject>Electrical resistance measurement</subject><subject>FETs</subject><subject>Performance evaluation</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Pulse amplifiers</subject><subject>Pulse measurements</subject><subject>Radio frequency</subject><subject>Radiofrequency amplifiers</subject><issn>0149-645X</issn><isbn>0780351355</isbn><isbn>9780780351356</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkE1Lw0AYhBdUsNb-AD3l5C1x332z2d2jFFvFFsEP1FPYtO_iSr7MNpT6643EuQwzPMxhGLsAngBwc71-e_5YJ2CMSZQyGuQRO-NKc5SAUh6zCYfUxFkq30_ZLIQvPiiVqUKcMFxSTZ0t_Q9to4c-fA4psrUtD8GHqHHR0yJqm_1fWbWld566cM5OnC0Dzf59yl4Xty_zu3j1uLyf36xiLzju4i1A5pw0zholNJcpIQjBhXWZEoUCh4AotXZYbDjPnLVaUGbBcFdoRQVO2dW423bNd09hl1c-bKgsbU1NH3KRGZkOCwN4OYKeiPK285XtDvn4Bf4CtntRzQ</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Blakey, P.A.</creator><creator>Johnson, E.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1999</creationdate><title>Generalized Kushner analysis of RF power amplifiers</title><author>Blakey, P.A. ; Johnson, E.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-d116ff59fa9728054e312202af672b71f3133588f3bc006faa82e6a190fb87eb3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Circuit synthesis</topic><topic>Electrical resistance measurement</topic><topic>FETs</topic><topic>Performance evaluation</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Pulse amplifiers</topic><topic>Pulse measurements</topic><topic>Radio frequency</topic><topic>Radiofrequency amplifiers</topic><toplevel>online_resources</toplevel><creatorcontrib>Blakey, P.A.</creatorcontrib><creatorcontrib>Johnson, E.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Blakey, P.A.</au><au>Johnson, E.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Generalized Kushner analysis of RF power amplifiers</atitle><btitle>1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)</btitle><stitle>MWSYM</stitle><date>1999</date><risdate>1999</risdate><volume>2</volume><spage>521</spage><epage>524 vol.2</epage><pages>521-524 vol.2</pages><issn>0149-645X</issn><isbn>0780351355</isbn><isbn>9780780351356</isbn><abstract>A new technique that accurately predicts the output power and drain efficiency of FET power amplifiers is described. This new technique uses a generalization of Kushner's amplifier analysis method together with measured pulsed I-V data. The technique can be used to replace or supplement load-pull measurements that are performed during technology development and circuit design. Excellent agreement with experimental load-pull measurements is demonstrated for several different transistor technologies over a broad range of load resistances.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1999.779815</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0149-645X |
| ispartof | 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.2, p.521-524 vol.2 |
| issn | 0149-645X |
| language | eng |
| recordid | cdi_ieee_primary_779815 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit synthesis Electrical resistance measurement FETs Performance evaluation Power amplifiers Power generation Pulse amplifiers Pulse measurements Radio frequency Radiofrequency amplifiers |
| title | Generalized Kushner analysis of RF power amplifiers |
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