Progress in high power SiC microwave MESFETs

SiC MESFET's have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz, demonstrating that SiC devices are capable of very high power densities and high efficiencies. Single devices with 48 mm of gate periphery were mounted in a hybrid circ...

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Bibliographische Detailangaben
Hauptverfasser:	Allen, S.T., Pribble, W.L., Sadler, R.A., Alcorn, T.S., Ring, Z., Palmour, J.W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Breakdown voltage Doping Gallium arsenide MESFETs Microwave devices Photonic band gap Radio frequency Silicon carbide Substrates Thermal conductivity
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Zusammenfassung:	SiC MESFET's have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz, demonstrating that SiC devices are capable of very high power densities and high efficiencies. Single devices with 48 mm of gate periphery were mounted in a hybrid circuit and achieved a maximum RF power of 80 watts CW at 3.1 GHz with 38% PAE.
DOI:	10.1109/MWSYM.1999.779484