Photosensitive Full-Swing Multi-Layer MoS2 Inverters With Light Shielding Layers
Multi-layered MoS 2 inverters with light shielding layers were fabricated and demonstrated for application in highly sensitive photodetectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical bandgap. The photoleakage behaviors of the inverters under changing...
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| Veröffentlicht in: | IEEE electron device letters 2017-01, Vol.38 (1), p.67-70 |
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| container_title | IEEE electron device letters |
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| creator | Jae Hyeon Ryu Geun-Woo Baek Seung Jae Yu Seung Gi Seo Sung Hun Jin |
| description | Multi-layered MoS 2 inverters with light shielding layers were fabricated and demonstrated for application in highly sensitive photodetectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical bandgap. The photoleakage behaviors of the inverters under changing wavelengths of light were experimentally demonstrated to occur in a controlled manner and were analytically validated by load-line analysis. When the inverters were operated with a depletion load in the light of blue light emitting diodes, the low noise margin and transition width were significantly enhanced, by approximately 20% and 220%, respectively, as compared with those of the inverters in the dark. |
| doi_str_mv | 10.1109/LED.2016.2633479 |
| format | Article |
| fullrecord | <record><control><sourceid>ieee_RIE</sourceid><recordid>TN_cdi_ieee_primary_7762768</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7762768</ieee_id><sourcerecordid>7762768</sourcerecordid><originalsourceid>FETCH-LOGICAL-i105t-7e9ac041824bd489d0e6e14863b790482800dd371366c25355f110e19c56b0103</originalsourceid><addsrcrecordid>eNotj8tKAzEUQIMoWKt7wU1-IOO9eWcptdXCFAujuCzTzm0nMrYySSv9e5-rszkcOIxdIxSIEG7L8X0hAW0hrVLahRM2QGO8AGPVKRuA0ygUgj1nFym9AaDWTg_YfN7u8i7RNsUcD8Qn-64T1Wfcbvhs3-UoyvpIPZ_tKsmn2wP1mfrEX2NueRk3beZVG6lrfvxfM12ys3XdJbr655C9TMbPo0dRPj1MR3eliAgmC0ehXoFGL_Wy0T40QJZQe6uWLoD20gM0jXKorF1Jo4xZf28ShpWxS0BQQ3bz141EtPjo43vdHxfOWemsV1-VzUw_</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photosensitive Full-Swing Multi-Layer MoS2 Inverters With Light Shielding Layers</title><source>IEEE Electronic Library (IEL)</source><creator>Jae Hyeon Ryu ; Geun-Woo Baek ; Seung Jae Yu ; Seung Gi Seo ; Sung Hun Jin</creator><creatorcontrib>Jae Hyeon Ryu ; Geun-Woo Baek ; Seung Jae Yu ; Seung Gi Seo ; Sung Hun Jin</creatorcontrib><description>Multi-layered MoS 2 inverters with light shielding layers were fabricated and demonstrated for application in highly sensitive photodetectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical bandgap. The photoleakage behaviors of the inverters under changing wavelengths of light were experimentally demonstrated to occur in a controlled manner and were analytically validated by load-line analysis. When the inverters were operated with a depletion load in the light of blue light emitting diodes, the low noise margin and transition width were significantly enhanced, by approximately 20% and 220%, respectively, as compared with those of the inverters in the dark.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2016.2633479</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Inverters ; light shielding layers ; Lighting ; Logic gates ; low noise margin ; Molybdenum ; MoS<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 FETs ; Photosensitive inverters ; Sulfur ; Thin film transistors ; voltage transfer characteristics</subject><ispartof>IEEE electron device letters, 2017-01, Vol.38 (1), p.67-70</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7762768$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7762768$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jae Hyeon Ryu</creatorcontrib><creatorcontrib>Geun-Woo Baek</creatorcontrib><creatorcontrib>Seung Jae Yu</creatorcontrib><creatorcontrib>Seung Gi Seo</creatorcontrib><creatorcontrib>Sung Hun Jin</creatorcontrib><title>Photosensitive Full-Swing Multi-Layer MoS2 Inverters With Light Shielding Layers</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Multi-layered MoS 2 inverters with light shielding layers were fabricated and demonstrated for application in highly sensitive photodetectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical bandgap. The photoleakage behaviors of the inverters under changing wavelengths of light were experimentally demonstrated to occur in a controlled manner and were analytically validated by load-line analysis. When the inverters were operated with a depletion load in the light of blue light emitting diodes, the low noise margin and transition width were significantly enhanced, by approximately 20% and 220%, respectively, as compared with those of the inverters in the dark.</description><subject>Inverters</subject><subject>light shielding layers</subject><subject>Lighting</subject><subject>Logic gates</subject><subject>low noise margin</subject><subject>Molybdenum</subject><subject>MoS<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 FETs</subject><subject>Photosensitive inverters</subject><subject>Sulfur</subject><subject>Thin film transistors</subject><subject>voltage transfer characteristics</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotj8tKAzEUQIMoWKt7wU1-IOO9eWcptdXCFAujuCzTzm0nMrYySSv9e5-rszkcOIxdIxSIEG7L8X0hAW0hrVLahRM2QGO8AGPVKRuA0ygUgj1nFym9AaDWTg_YfN7u8i7RNsUcD8Qn-64T1Wfcbvhs3-UoyvpIPZ_tKsmn2wP1mfrEX2NueRk3beZVG6lrfvxfM12ys3XdJbr655C9TMbPo0dRPj1MR3eliAgmC0ehXoFGL_Wy0T40QJZQe6uWLoD20gM0jXKorF1Jo4xZf28ShpWxS0BQQ3bz141EtPjo43vdHxfOWemsV1-VzUw_</recordid><startdate>201701</startdate><enddate>201701</enddate><creator>Jae Hyeon Ryu</creator><creator>Geun-Woo Baek</creator><creator>Seung Jae Yu</creator><creator>Seung Gi Seo</creator><creator>Sung Hun Jin</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope></search><sort><creationdate>201701</creationdate><title>Photosensitive Full-Swing Multi-Layer MoS2 Inverters With Light Shielding Layers</title><author>Jae Hyeon Ryu ; Geun-Woo Baek ; Seung Jae Yu ; Seung Gi Seo ; Sung Hun Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-7e9ac041824bd489d0e6e14863b790482800dd371366c25355f110e19c56b0103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Inverters</topic><topic>light shielding layers</topic><topic>Lighting</topic><topic>Logic gates</topic><topic>low noise margin</topic><topic>Molybdenum</topic><topic>MoS<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 FETs</topic><topic>Photosensitive inverters</topic><topic>Sulfur</topic><topic>Thin film transistors</topic><topic>voltage transfer characteristics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jae Hyeon Ryu</creatorcontrib><creatorcontrib>Geun-Woo Baek</creatorcontrib><creatorcontrib>Seung Jae Yu</creatorcontrib><creatorcontrib>Seung Gi Seo</creatorcontrib><creatorcontrib>Sung Hun Jin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jae Hyeon Ryu</au><au>Geun-Woo Baek</au><au>Seung Jae Yu</au><au>Seung Gi Seo</au><au>Sung Hun Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photosensitive Full-Swing Multi-Layer MoS2 Inverters With Light Shielding Layers</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2017-01</date><risdate>2017</risdate><volume>38</volume><issue>1</issue><spage>67</spage><epage>70</epage><pages>67-70</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Multi-layered MoS 2 inverters with light shielding layers were fabricated and demonstrated for application in highly sensitive photodetectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical bandgap. The photoleakage behaviors of the inverters under changing wavelengths of light were experimentally demonstrated to occur in a controlled manner and were analytically validated by load-line analysis. When the inverters were operated with a depletion load in the light of blue light emitting diodes, the low noise margin and transition width were significantly enhanced, by approximately 20% and 220%, respectively, as compared with those of the inverters in the dark.</abstract><pub>IEEE</pub><doi>10.1109/LED.2016.2633479</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| subjects | Inverters light shielding layers Lighting Logic gates low noise margin Molybdenum MoS<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 FETs Photosensitive inverters Sulfur Thin film transistors voltage transfer characteristics |
| title | Photosensitive Full-Swing Multi-Layer MoS2 Inverters With Light Shielding Layers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T20%3A23%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photosensitive%20Full-Swing%20Multi-Layer%20MoS2%20Inverters%20With%20Light%20Shielding%20Layers&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Jae%20Hyeon%20Ryu&rft.date=2017-01&rft.volume=38&rft.issue=1&rft.spage=67&rft.epage=70&rft.pages=67-70&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2016.2633479&rft_dat=%3Cieee_RIE%3E7762768%3C/ieee_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=7762768&rfr_iscdi=true |