Self-Powered UV-B Photodetector Based on Hybrid Al:MgZnO/PEDOT:PSS Schottky Diode

Self-Powered UV-B Photodetector Based on Hybrid Al:MgZnO/PEDOT:PSS Schottky Diode

Wide bandgap Al-doped MgZnO (AMZO) films with a Mg content up to 47.5% were prepared on sapphire substrates. Conductivities of the AMZO films were greatly improved through zinc vapor annealing. Vertical structure photodiodes were fabricated by introducing poly (3, 4-ethylenedioxythiophene) poly (sty...

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Veröffentlicht in:IEEE electron device letters 2017-01, Vol.38 (1), p.79-82
Hauptverfasser: Zheng, Qinghong, Huang, Jin, Han, Chuxia, Chen, Yanqin
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Conductivity
MgZnO
Photodiodes
Schottky barriers
Schottky photodiode
self-powered
UV-B
Zinc
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Zusammenfassung:Wide bandgap Al-doped MgZnO (AMZO) films with a Mg content up to 47.5% were prepared on sapphire substrates. Conductivities of the AMZO films were greatly improved through zinc vapor annealing. Vertical structure photodiodes were fabricated by introducing poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDOT:PSS) as a Schottky contact. The photodiode showed characteristics response to the UV-B light, with a peak responsivity of 19.1 mA/W at 278 nm and a visible rejection ratio of over two orders without external bias. The high performance was attributed to the high conductivity of the AMZO film and good Schottky contact formed using PEDOT:PSS.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2631551