Solid source molecular beam epitaxy growth of low threshold and high temperature 1.3 /spl mu/m AlGaInAs-AlInAs-InP laser diodes suitable for uncooled application

Al/sub x/Ga/sub y/ln/sub 1-x-y/As/InP strained-layer multiple quantum well lasers emitting at 1.3 /spl mu/m have been grown by solid source molecular beam epitaxy, and the performance characteristics have been studied. The lasers contain 4, 5, or 6 compressively strained quantum wells in the active...

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Hauptverfasser:	Savolainen, P., Toivonen, M., Melanen, P., Vilokkinen, V., Saarinen, M., Orsila, S., Kuuslahti, T., Salokatve, A., Asonen, H., Panarello, T., Murisonib, R., Pessa, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electrons Indium phosphide Molecular beam epitaxial growth Optical materials Quantum well lasers Radiative recombination Solids Temperature dependence Temperature distribution Temperature sensors
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