Monolithically Integrated High-Extinction-Ratio MZM With a Segmented Driver in Photonic BiCMOS
In this letter, a dual-drive Si depletion-type Mach-Zehnder modulator (MZM) monolithically integrated with a segmented driver using 0.25-μm SiGe:C photonic bipolar complementary metal-oxide-semiconductor technology is demonstrated. The phase shifter on each MZM arm has a total length of 6.048 mm and...
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| Veröffentlicht in: | IEEE photonics technology letters 2016-12, Vol.28 (24), p.2866-2869 |
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| creator | Petousi, Despoina Rito, Pedro Lischke, Stefan Knoll, Dieter Garcia-Lopez, Iria Kroh, Marcel Barth, Rainer Mai, Christian Ulusoy, Ahmet-Cagri Peczek, Anna Winzer, Georg Voigt, Karsten Kissinger, Dietmar Petermann, Klaus Zimmermann, Lars |
| description | In this letter, a dual-drive Si depletion-type Mach-Zehnder modulator (MZM) monolithically integrated with a segmented driver using 0.25-μm SiGe:C photonic bipolar complementary metal-oxide-semiconductor technology is demonstrated. The phase shifter on each MZM arm has a total length of 6.048 mm and is divided into 16 sections, driven by the driver segments. Extinction ratio (ER) higher than 11 dB is shown at 28 and 32 Gb/s at ON-OFF keying with a differential input voltage swing of 800 mVpp (3.5 V pp on the phase shifters). The power consumption equals to 64 pJ/b at 28 Gb/s. This is one of the highest ER values shown by a monolithically integrated Si MZM at this data rate. |
| doi_str_mv | 10.1109/LPT.2016.2624700 |
| format | Article |
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The phase shifter on each MZM arm has a total length of 6.048 mm and is divided into 16 sections, driven by the driver segments. Extinction ratio (ER) higher than 11 dB is shown at 28 and 32 Gb/s at ON-OFF keying with a differential input voltage swing of 800 mVpp (3.5 V pp on the phase shifters). The power consumption equals to 64 pJ/b at 28 Gb/s. 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The phase shifter on each MZM arm has a total length of 6.048 mm and is divided into 16 sections, driven by the driver segments. Extinction ratio (ER) higher than 11 dB is shown at 28 and 32 Gb/s at ON-OFF keying with a differential input voltage swing of 800 mVpp (3.5 V pp on the phase shifters). The power consumption equals to 64 pJ/b at 28 Gb/s. This is one of the highest ER values shown by a monolithically integrated Si MZM at this data rate.</description><subject>Bandwidth</subject><subject>CMOS</subject><subject>Depletion</subject><subject>Extinction</subject><subject>integrated optoelectronics</subject><subject>Keying</subject><subject>Mach-Zehnder interferometers</subject><subject>Optical modulation</subject><subject>Optical transmitters</subject><subject>Phase shifters</subject><subject>Photonics</subject><subject>Power consumption</subject><subject>Silicon</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PAjEURRujiYjuTdw0cT3Y1w-ms1REIWECEYyJC5tOp0AJdLAzGPn3lkBc3bc4977kIHQLpANAsofRZNahBLod2qU8JeQMtSDjkBBI-Xm8SbwBmLhEV3W9IgS4YLyFvvLKV2vXLJ3R6_UeD31jF0E3tsQDt1gm_d_GedO4yidvOgbOP3P8EXms8dQuNtYf0OfgfmzAzuPJsmoq7wx-cr18PL1GF3O9ru3NKdvo_aU_6w2S0fh12HscJYYx2SSWZ2VaFlKUXVlYSVOdCSEyy0HHkIZTonkpKZc6ZcYyRkGWWQHUFIIaW7A2uj_ubkP1vbN1o1bVLvj4UoHkHAgVQCNFjpQJVV0HO1fb4DY67BUQdbCookV1sKhOFmPl7lhx1tp_PE1ZnJPsDy6GbMQ</recordid><startdate>20161215</startdate><enddate>20161215</enddate><creator>Petousi, Despoina</creator><creator>Rito, Pedro</creator><creator>Lischke, Stefan</creator><creator>Knoll, Dieter</creator><creator>Garcia-Lopez, Iria</creator><creator>Kroh, Marcel</creator><creator>Barth, Rainer</creator><creator>Mai, Christian</creator><creator>Ulusoy, Ahmet-Cagri</creator><creator>Peczek, Anna</creator><creator>Winzer, Georg</creator><creator>Voigt, Karsten</creator><creator>Kissinger, Dietmar</creator><creator>Petermann, Klaus</creator><creator>Zimmermann, Lars</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Bandwidth CMOS Depletion Extinction integrated optoelectronics Keying Mach-Zehnder interferometers Optical modulation Optical transmitters Phase shifters Photonics Power consumption Silicon |
| title | Monolithically Integrated High-Extinction-Ratio MZM With a Segmented Driver in Photonic BiCMOS |
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