Time-Dependent Electrical Resistance of Transmutational Material With 57Co
Transmutational material is studied as a changing electrical resistance over time. A process compatible to complementary metal oxide semiconductors is developed to deposit transmutational material. The material contains the radioisotope 57 Co which decays and causes an elemental change, in turn caus...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2016-12, Vol.63 (6), p.2993-2996 |
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| container_title | IEEE transactions on nuclear science |
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| creator | Yoshimizu, Norimasa |
| description | Transmutational material is studied as a changing electrical resistance over time. A process compatible to complementary metal oxide semiconductors is developed to deposit transmutational material. The material contains the radioisotope 57 Co which decays and causes an elemental change, in turn causing a change in electrical resistance over time. Significant increases- nearly a factor of four- in sample resistance over time are observed. Scaling is presented to show that samples that are less than 10 % of typical background exposure could be fabricated on the scale of microelectronics, avoiding detection. Finally, an application is demonstrated of a Wheatstone bridge containing a transmutational sample, leading to timed disabling of a power regulator. |
| doi_str_mv | 10.1109/TNS.2016.2624278 |
| format | Article |
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The material contains the radioisotope 57 Co which decays and causes an elemental change, in turn causing a change in electrical resistance over time. Significant increases- nearly a factor of four- in sample resistance over time are observed. Scaling is presented to show that samples that are less than 10 % of typical background exposure could be fabricated on the scale of microelectronics, avoiding detection. Finally, an application is demonstrated of a Wheatstone bridge containing a transmutational sample, leading to timed disabling of a power regulator.</description><subject>CMOS</subject><subject>Cobalt</subject><subject>Cobalt isotopes</subject><subject>Electrical resistance</subject><subject>Electrical resistance measurement</subject><subject>Electrical resistivity</subject><subject>Electronics industry</subject><subject>Magnetism</subject><subject>Metal oxide semiconductors</subject><subject>Radioactive materials</subject><subject>Radioisotopes</subject><subject>Resistance</subject><subject>Substrates</subject><subject>Time dependence</subject><subject>Time measurement</subject><subject>transmutation</subject><subject>Voltage regulators</subject><subject>Wheatstone bridges</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotjk1LAzEYhIMoWKt3wcuC5615852j1PpFVdAFj0sa32DKdrcm2YP_3oV6mhnmYRhCLoEuAKi9aV4_FoyCWjDFBNPmiMxASlOD1OaYzCgFU1th7Sk5y3k7RSGpnJHnJu6wvsM99l_Yl2rVoS8petdV75hjLq73WA2hapLr824srsShn9oXVzDFyXzG8l1JvRzOyUlwXcaLf52T5n7VLB_r9dvD0_J2XUdhRM2VpI6BE14LaRUNDLlnbuO5Q7CecYWcKc4sINVMKc0CFybYEDYSjLF8Tq4Ps_s0_IyYS7sdxjRdyi0YSRmnBsREXR2oiIjtPsWdS7-t1hxAc_4HZfZV9w</recordid><startdate>201612</startdate><enddate>201612</enddate><creator>Yoshimizu, Norimasa</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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A process compatible to complementary metal oxide semiconductors is developed to deposit transmutational material. The material contains the radioisotope 57 Co which decays and causes an elemental change, in turn causing a change in electrical resistance over time. Significant increases- nearly a factor of four- in sample resistance over time are observed. Scaling is presented to show that samples that are less than 10 % of typical background exposure could be fabricated on the scale of microelectronics, avoiding detection. Finally, an application is demonstrated of a Wheatstone bridge containing a transmutational sample, leading to timed disabling of a power regulator.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2016.2624278</doi><tpages>4</tpages></addata></record> |
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| ispartof | IEEE transactions on nuclear science, 2016-12, Vol.63 (6), p.2993-2996 |
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| source | IEEE Electronic Library (IEL) |
| subjects | CMOS Cobalt Cobalt isotopes Electrical resistance Electrical resistance measurement Electrical resistivity Electronics industry Magnetism Metal oxide semiconductors Radioactive materials Radioisotopes Resistance Substrates Time dependence Time measurement transmutation Voltage regulators Wheatstone bridges |
| title | Time-Dependent Electrical Resistance of Transmutational Material With 57Co |
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