Time-Dependent Electrical Resistance of Transmutational Material With 57Co

Transmutational material is studied as a changing electrical resistance over time. A process compatible to complementary metal oxide semiconductors is developed to deposit transmutational material. The material contains the radioisotope 57 Co which decays and causes an elemental change, in turn causing a change in electrical resistance over time. Significant increases- nearly a factor of four- in sample resistance over time are observed. Scaling is presented to show that samples that are less than 10 % of typical background exposure could be fabricated on the scale of microelectronics, avoiding detection. Finally, an application is demonstrated of a Wheatstone bridge containing a transmutational sample, leading to timed disabling of a power regulator.