Optimization of SiGe HBTs for operation at high current densities

A comprehensive investigation of the impact of Ge profile shape as well as the scaling of collector and base doping profiles on high-injection heterojunction barrier effects in SiGe HBTs has been conducted over the -73-85/spl deg/C temperature range. The onset of Kirk effect at high current densitie...

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Veröffentlicht in:	IEEE transactions on electron devices 1999-07, Vol.46 (7), p.1347-1354
Hauptverfasser:	Joseph, A.J., Cressler, J.D., Richey, D.M., Niu, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accumulators Barriers Collectors Density Germanium Germanium alloys High current Optimization Silicon germanides
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