Synthesis and structure of oxygenated fullerene film
The conductive properties of C/sub 60/ films annealed in oxygen are different from unannealed samples. The films turn X-ray amorphous and show semiconducting behavior. The present work is devoted to a study of the role of oxygen in the oxidation process of C/sub 60/ films on the basis of a structure...
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| creator | Shevtsov, Yu.V. Berdinsky, A.S. Okotrub, A.V. Yanovsky, Yu.A. Ayupov, B.M. Guselnikov, A.V. Kravtchenko, V.S. |
| description | The conductive properties of C/sub 60/ films annealed in oxygen are different from unannealed samples. The films turn X-ray amorphous and show semiconducting behavior. The present work is devoted to a study of the role of oxygen in the oxidation process of C/sub 60/ films on the basis of a structure investigation. The fullerene films were obtained by gas-phase deposition in dry argon at low pressure. The films were annealed in air for 30 minutes at temperatures of 330-390 /spl deg/C. Reflection IR spectra were obtained for films on silicon substrates. |
| doi_str_mv | 10.1109/APEIE.1998.768907 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_768907</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>768907</ieee_id><sourcerecordid>768907</sourcerecordid><originalsourceid>FETCH-LOGICAL-i174t-cba6d2091ee52f2ec74209fdb62b5f0839faf0971020a04a4f0526f14ed8f3e83</originalsourceid><addsrcrecordid>eNotj81Kw0AUhQdEUGoeQFfzAol3_jIzy1KiFgoVbNdlktyrI2kqmQTM2xuohwMfZ_PBYexRQCEE-Of1e7WtCuG9K2zpPNgblnnrYKnSXjl9x7KUvmGJNkYoe8_0x9yPX5hi4qFveRqHqRmnAfmF-OV3_sQ-jNhymroOB-yRU-zOD-yWQpcw--eKHV-qw-Yt3-1ft5v1Lo_C6jFv6lC2ErxANJIkNlYvi9q6lLUhcMpTIPBWgIQAOmgCI0sSGltHCp1asaerNyLi6WeI5zDMp-s19QflxkRv</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Synthesis and structure of oxygenated fullerene film</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Shevtsov, Yu.V. ; Berdinsky, A.S. ; Okotrub, A.V. ; Yanovsky, Yu.A. ; Ayupov, B.M. ; Guselnikov, A.V. ; Kravtchenko, V.S.</creator><creatorcontrib>Shevtsov, Yu.V. ; Berdinsky, A.S. ; Okotrub, A.V. ; Yanovsky, Yu.A. ; Ayupov, B.M. ; Guselnikov, A.V. ; Kravtchenko, V.S.</creatorcontrib><description>The conductive properties of C/sub 60/ films annealed in oxygen are different from unannealed samples. The films turn X-ray amorphous and show semiconducting behavior. The present work is devoted to a study of the role of oxygen in the oxidation process of C/sub 60/ films on the basis of a structure investigation. The fullerene films were obtained by gas-phase deposition in dry argon at low pressure. The films were annealed in air for 30 minutes at temperatures of 330-390 /spl deg/C. Reflection IR spectra were obtained for films on silicon substrates.</description><identifier>ISBN: 9780780349384</identifier><identifier>ISBN: 0780349385</identifier><identifier>DOI: 10.1109/APEIE.1998.768907</identifier><language>eng</language><publisher>IEEE</publisher><subject>Amorphous materials ; Annealing ; Argon ; Conductive films ; Optical films ; Oxidation ; Reflection ; Semiconductivity ; Semiconductor films ; Temperature</subject><ispartof>1998 4th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-98 (Cat. No.98EX179), 1998, p.54</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/768907$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/768907$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Shevtsov, Yu.V.</creatorcontrib><creatorcontrib>Berdinsky, A.S.</creatorcontrib><creatorcontrib>Okotrub, A.V.</creatorcontrib><creatorcontrib>Yanovsky, Yu.A.</creatorcontrib><creatorcontrib>Ayupov, B.M.</creatorcontrib><creatorcontrib>Guselnikov, A.V.</creatorcontrib><creatorcontrib>Kravtchenko, V.S.</creatorcontrib><title>Synthesis and structure of oxygenated fullerene film</title><title>1998 4th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-98 (Cat. No.98EX179)</title><addtitle>APEIE</addtitle><description>The conductive properties of C/sub 60/ films annealed in oxygen are different from unannealed samples. The films turn X-ray amorphous and show semiconducting behavior. The present work is devoted to a study of the role of oxygen in the oxidation process of C/sub 60/ films on the basis of a structure investigation. The fullerene films were obtained by gas-phase deposition in dry argon at low pressure. The films were annealed in air for 30 minutes at temperatures of 330-390 /spl deg/C. Reflection IR spectra were obtained for films on silicon substrates.</description><subject>Amorphous materials</subject><subject>Annealing</subject><subject>Argon</subject><subject>Conductive films</subject><subject>Optical films</subject><subject>Oxidation</subject><subject>Reflection</subject><subject>Semiconductivity</subject><subject>Semiconductor films</subject><subject>Temperature</subject><isbn>9780780349384</isbn><isbn>0780349385</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81Kw0AUhQdEUGoeQFfzAol3_jIzy1KiFgoVbNdlktyrI2kqmQTM2xuohwMfZ_PBYexRQCEE-Of1e7WtCuG9K2zpPNgblnnrYKnSXjl9x7KUvmGJNkYoe8_0x9yPX5hi4qFveRqHqRmnAfmF-OV3_sQ-jNhymroOB-yRU-zOD-yWQpcw--eKHV-qw-Yt3-1ft5v1Lo_C6jFv6lC2ErxANJIkNlYvi9q6lLUhcMpTIPBWgIQAOmgCI0sSGltHCp1asaerNyLi6WeI5zDMp-s19QflxkRv</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Shevtsov, Yu.V.</creator><creator>Berdinsky, A.S.</creator><creator>Okotrub, A.V.</creator><creator>Yanovsky, Yu.A.</creator><creator>Ayupov, B.M.</creator><creator>Guselnikov, A.V.</creator><creator>Kravtchenko, V.S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1998</creationdate><title>Synthesis and structure of oxygenated fullerene film</title><author>Shevtsov, Yu.V. ; Berdinsky, A.S. ; Okotrub, A.V. ; Yanovsky, Yu.A. ; Ayupov, B.M. ; Guselnikov, A.V. ; Kravtchenko, V.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-cba6d2091ee52f2ec74209fdb62b5f0839faf0971020a04a4f0526f14ed8f3e83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Amorphous materials</topic><topic>Annealing</topic><topic>Argon</topic><topic>Conductive films</topic><topic>Optical films</topic><topic>Oxidation</topic><topic>Reflection</topic><topic>Semiconductivity</topic><topic>Semiconductor films</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Shevtsov, Yu.V.</creatorcontrib><creatorcontrib>Berdinsky, A.S.</creatorcontrib><creatorcontrib>Okotrub, A.V.</creatorcontrib><creatorcontrib>Yanovsky, Yu.A.</creatorcontrib><creatorcontrib>Ayupov, B.M.</creatorcontrib><creatorcontrib>Guselnikov, A.V.</creatorcontrib><creatorcontrib>Kravtchenko, V.S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shevtsov, Yu.V.</au><au>Berdinsky, A.S.</au><au>Okotrub, A.V.</au><au>Yanovsky, Yu.A.</au><au>Ayupov, B.M.</au><au>Guselnikov, A.V.</au><au>Kravtchenko, V.S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Synthesis and structure of oxygenated fullerene film</atitle><btitle>1998 4th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-98 (Cat. No.98EX179)</btitle><stitle>APEIE</stitle><date>1998</date><risdate>1998</risdate><spage>54</spage><pages>54-</pages><isbn>9780780349384</isbn><isbn>0780349385</isbn><abstract>The conductive properties of C/sub 60/ films annealed in oxygen are different from unannealed samples. The films turn X-ray amorphous and show semiconducting behavior. The present work is devoted to a study of the role of oxygen in the oxidation process of C/sub 60/ films on the basis of a structure investigation. The fullerene films were obtained by gas-phase deposition in dry argon at low pressure. The films were annealed in air for 30 minutes at temperatures of 330-390 /spl deg/C. Reflection IR spectra were obtained for films on silicon substrates.</abstract><pub>IEEE</pub><doi>10.1109/APEIE.1998.768907</doi></addata></record> |
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| identifier | ISBN: 9780780349384 |
| ispartof | 1998 4th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-98 (Cat. No.98EX179), 1998, p.54 |
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| language | eng |
| recordid | cdi_ieee_primary_768907 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Amorphous materials Annealing Argon Conductive films Optical films Oxidation Reflection Semiconductivity Semiconductor films Temperature |
| title | Synthesis and structure of oxygenated fullerene film |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T01%3A38%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Synthesis%20and%20structure%20of%20oxygenated%20fullerene%20film&rft.btitle=1998%204th%20International%20Conference%20on%20Actual%20Problems%20of%20Electronic%20Instrument%20Engineering%20Proceedings.%20APEIE-98%20(Cat.%20No.98EX179)&rft.au=Shevtsov,%20Yu.V.&rft.date=1998&rft.spage=54&rft.pages=54-&rft.isbn=9780780349384&rft.isbn_list=0780349385&rft_id=info:doi/10.1109/APEIE.1998.768907&rft_dat=%3Cieee_6IE%3E768907%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=768907&rfr_iscdi=true |