Synthesis and structure of oxygenated fullerene film

Synthesis and structure of oxygenated fullerene film

The conductive properties of C/sub 60/ films annealed in oxygen are different from unannealed samples. The films turn X-ray amorphous and show semiconducting behavior. The present work is devoted to a study of the role of oxygen in the oxidation process of C/sub 60/ films on the basis of a structure...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Shevtsov, Yu.V., Berdinsky, A.S., Okotrub, A.V., Yanovsky, Yu.A., Ayupov, B.M., Guselnikov, A.V., Kravtchenko, V.S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Amorphous materials
Annealing
Argon
Conductive films
Optical films
Oxidation
Reflection
Semiconductivity
Semiconductor films
Temperature
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The conductive properties of C/sub 60/ films annealed in oxygen are different from unannealed samples. The films turn X-ray amorphous and show semiconducting behavior. The present work is devoted to a study of the role of oxygen in the oxidation process of C/sub 60/ films on the basis of a structure investigation. The fullerene films were obtained by gas-phase deposition in dry argon at low pressure. The films were annealed in air for 30 minutes at temperatures of 330-390 /spl deg/C. Reflection IR spectra were obtained for films on silicon substrates.
DOI:10.1109/APEIE.1998.768907