Single-Pulse Avalanche Mode Robustness of Commercial 1200 V/80 mΩ SiC MOSFETs

Commercialization of 1200-V silicon carbide (SiC) MOSFET has enabled power electronic design with improved efficiency as well as increased power density. High-voltage spikes induced in applications such as solenoid control, solid-state transformer, boost converter, and flyback converter can drive th...

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Veröffentlicht in:	IEEE transactions on power electronics 2017-08, Vol.32 (8), p.6405-6415
Hauptverfasser:	Kelley, Mitchell D., Pushpakaran, Bejoy N., Bayne, Stephen B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Avalanche breakdown Current measurement failure analysis Inductance Inductors MOSFET MOSFETs power semiconductor devices semiconductor device reliability Silicon carbide silicon carbide (SiC) Switches unclamped inductive switching (UIS) Voltage measurement
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