A CMOS bandgap reference circuit with sub-1-V operation
This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, In the conventional BGR circuit, the output voltage V/sub ref/ is the sum of the built-in voltage of the diode V/sub f/ and the thermal voltage V/sub T/ of kT/q multiplied by a constant. T...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 1999-05, Vol.34 (5), p.670-674 |
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| container_end_page | 674 |
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| container_issue | 5 |
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| container_title | IEEE journal of solid-state circuits |
| container_volume | 34 |
| creator | Banba, H. Shiga, H. Umezawa, A. Miyaba, T. Tanzawa, T. Atsumi, S. Sakui, K. |
| description | This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, In the conventional BGR circuit, the output voltage V/sub ref/ is the sum of the built-in voltage of the diode V/sub f/ and the thermal voltage V/sub T/ of kT/q multiplied by a constant. Therefore, V/sub ref/ is about 1.25 V, which limits a low supply-voltage operation below 1 V. Conversely, in the proposed BGR circuit, V/sub ref/ has been converted from the sum of two currents; one is proportional to V/sub f/ and the other is proportional to V/sub T/. An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-/spl mu/m flash memory process. Measured V/sub ref/ is 518/spl plusmn/15 mV (3/spl sigma/) for 23 samples on the same wafer at 27-125/spl deg/C. |
| doi_str_mv | 10.1109/4.760378 |
| format | Article |
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Therefore, V/sub ref/ is about 1.25 V, which limits a low supply-voltage operation below 1 V. Conversely, in the proposed BGR circuit, V/sub ref/ has been converted from the sum of two currents; one is proportional to V/sub f/ and the other is proportional to V/sub T/. An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-/spl mu/m flash memory process. 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Therefore, V/sub ref/ is about 1.25 V, which limits a low supply-voltage operation below 1 V. Conversely, in the proposed BGR circuit, V/sub ref/ has been converted from the sum of two currents; one is proportional to V/sub f/ and the other is proportional to V/sub T/. An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-/spl mu/m flash memory process. Measured V/sub ref/ is 518/spl plusmn/15 mV (3/spl sigma/) for 23 samples on the same wafer at 27-125/spl deg/C.</description><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS memory circuits</subject><subject>CMOS process</subject><subject>Diodes</subject><subject>Electric circuits</subject><subject>Electric potential</subject><subject>Flash memory (computers)</subject><subject>Microelectronics</subject><subject>Operational amplifiers</subject><subject>Photonic band gap</subject><subject>Proportional control</subject><subject>Resistors</subject><subject>Semiconductor diodes</subject><subject>Temperature</subject><subject>Voltage</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0EtLw0AQwPFFFKxV8OwpJ_WSupN9H0upD6j04ANvYbOZ1UibxN0E8dsbSfGop2GYH3P4E3IKdAZAzRWfKUmZ0ntkAkLoFBR72ScTSkGnJqP0kBzF-D6snGuYEDVPFvfrh6Swdflq2ySgx4C1w8RVwfVVl3xW3VsS-yKF9DlpWgy2q5r6mBx4u4l4sptT8nS9fFzcpqv1zd1ivkodU1mXgneWSWS0FIVw3khhCy5LSyUo6xUUXgkqkGthPLBSZBnjyJySrlDSU2RTcjH-bUPz0WPs8m0VHW42tsamj7kBY5jUig_y_E-Z6YFSAf9DaVimmB7g5QhdaGIcyuRtqLY2fOVA85_YOc_H2AM9G2mFiL9sd_wGII93EQ</recordid><startdate>19990501</startdate><enddate>19990501</enddate><creator>Banba, H.</creator><creator>Shiga, H.</creator><creator>Umezawa, A.</creator><creator>Miyaba, T.</creator><creator>Tanzawa, T.</creator><creator>Atsumi, S.</creator><creator>Sakui, K.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>7SP</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>19990501</creationdate><title>A CMOS bandgap reference circuit with sub-1-V operation</title><author>Banba, H. ; Shiga, H. ; Umezawa, A. ; Miyaba, T. ; Tanzawa, T. ; Atsumi, S. ; Sakui, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-1fca36e30d5b5cf965ab46da0617af71bf7505e4859f13d52234e3c76cb76f0e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Circuits</topic><topic>CMOS</topic><topic>CMOS memory circuits</topic><topic>CMOS process</topic><topic>Diodes</topic><topic>Electric circuits</topic><topic>Electric potential</topic><topic>Flash memory (computers)</topic><topic>Microelectronics</topic><topic>Operational amplifiers</topic><topic>Photonic band gap</topic><topic>Proportional control</topic><topic>Resistors</topic><topic>Semiconductor diodes</topic><topic>Temperature</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Banba, H.</creatorcontrib><creatorcontrib>Shiga, H.</creatorcontrib><creatorcontrib>Umezawa, A.</creatorcontrib><creatorcontrib>Miyaba, T.</creatorcontrib><creatorcontrib>Tanzawa, T.</creatorcontrib><creatorcontrib>Atsumi, S.</creatorcontrib><creatorcontrib>Sakui, K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Electronics & Communications Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Banba, H.</au><au>Shiga, H.</au><au>Umezawa, A.</au><au>Miyaba, T.</au><au>Tanzawa, T.</au><au>Atsumi, S.</au><au>Sakui, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A CMOS bandgap reference circuit with sub-1-V operation</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1999-05-01</date><risdate>1999</risdate><volume>34</volume><issue>5</issue><spage>670</spage><epage>674</epage><pages>670-674</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, In the conventional BGR circuit, the output voltage V/sub ref/ is the sum of the built-in voltage of the diode V/sub f/ and the thermal voltage V/sub T/ of kT/q multiplied by a constant. Therefore, V/sub ref/ is about 1.25 V, which limits a low supply-voltage operation below 1 V. Conversely, in the proposed BGR circuit, V/sub ref/ has been converted from the sum of two currents; one is proportional to V/sub f/ and the other is proportional to V/sub T/. An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-/spl mu/m flash memory process. Measured V/sub ref/ is 518/spl plusmn/15 mV (3/spl sigma/) for 23 samples on the same wafer at 27-125/spl deg/C.</abstract><pub>IEEE</pub><doi>10.1109/4.760378</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Circuits CMOS CMOS memory circuits CMOS process Diodes Electric circuits Electric potential Flash memory (computers) Microelectronics Operational amplifiers Photonic band gap Proportional control Resistors Semiconductor diodes Temperature Voltage |
| title | A CMOS bandgap reference circuit with sub-1-V operation |
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