Radiation thermometry of silicon wafers in a diffusion furnace for fabrication of LSI
A radiation thermometry technique suitable for measuring the temperature of silicon wafers in a diffusion furnace has been developed. A principal feature of this technique is that it measures the temperature of wafers that are not in the line of sight of a conventional pyrometer. An optical guide, c...
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| Veröffentlicht in: | IEEE transactions on semiconductor manufacturing 1991-02, Vol.4 (1), p.59-63 |
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| container_title | IEEE transactions on semiconductor manufacturing |
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| creator | Watanabe, T. Torii, T. Hirasawa, S. Takagaki, T. |
| description | A radiation thermometry technique suitable for measuring the temperature of silicon wafers in a diffusion furnace has been developed. A principal feature of this technique is that it measures the temperature of wafers that are not in the line of sight of a conventional pyrometer. An optical guide, consisting of two quartz prisms, gives optical access to interior wafers in the load. A measuring wavelength of 0.9 mu m is selected since a silicon wafer is opaque and its emissivity does not depend on temperature at this wavelength. The accuracy of the thermometry is examined by comparing the measured value of the pyrometer with that of a thermocouple. The two measured values agree within +or-2 degrees C in a steady state. When wafers are being inserted into or drawn out from the furnace, however, an error is caused by the veiling glare at the optical guide and the wafer.< > |
| doi_str_mv | 10.1109/66.75853 |
| format | Article |
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A principal feature of this technique is that it measures the temperature of wafers that are not in the line of sight of a conventional pyrometer. An optical guide, consisting of two quartz prisms, gives optical access to interior wafers in the load. A measuring wavelength of 0.9 mu m is selected since a silicon wafer is opaque and its emissivity does not depend on temperature at this wavelength. The accuracy of the thermometry is examined by comparing the measured value of the pyrometer with that of a thermocouple. The two measured values agree within +or-2 degrees C in a steady state. When wafers are being inserted into or drawn out from the furnace, however, an error is caused by the veiling glare at the optical guide and the wafer.< ></description><identifier>ISSN: 0894-6507</identifier><identifier>EISSN: 1558-2345</identifier><identifier>DOI: 10.1109/66.75853</identifier><identifier>CODEN: ITSMED</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Electronics ; Exact sciences and technology ; Fabrication ; Furnaces ; Heating ; Impurities ; Large scale integration ; Pollution measurement ; Semiconductor electronics. Microelectronics. Optoelectronics. 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A principal feature of this technique is that it measures the temperature of wafers that are not in the line of sight of a conventional pyrometer. An optical guide, consisting of two quartz prisms, gives optical access to interior wafers in the load. A measuring wavelength of 0.9 mu m is selected since a silicon wafer is opaque and its emissivity does not depend on temperature at this wavelength. The accuracy of the thermometry is examined by comparing the measured value of the pyrometer with that of a thermocouple. The two measured values agree within +or-2 degrees C in a steady state. When wafers are being inserted into or drawn out from the furnace, however, an error is caused by the veiling glare at the optical guide and the wafer.< ></description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Furnaces</subject><subject>Heating</subject><subject>Impurities</subject><subject>Large scale integration</subject><subject>Pollution measurement</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Temperature measurement</subject><subject>Wavelength measurement</subject><issn>0894-6507</issn><issn>1558-2345</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqF0c9LwzAUwPEgCs4pePXWg4iXzqT50eQowx-DgaDuXNL0PYx07UxaZP-9nR277vQg75Pv5RFyzeiMMWoelJrlUkt-QiZMSp1mXMhTMqHaiFRJmp-Tixi_KWVCmHxCVu-28rbzbZN0XxDW7Rq6sE1aTKKvvRuefy1CiIlvEptUHrGPO4x9aKyDBNuQoC2Dd2Nk-Lj8WFySM7R1hKv9nJLV89Pn_DVdvr0s5o_L1HElu7TSwhlEBK0cWhQlFTlXFLjUKLk1JaLRHNBw6pzDCipnVCY0E7zMmOZ8Su7G7ia0Pz3Erlj76KCubQNtH4vMSJmJnB2HWgq-Sx6FUlDJWTbA-xG60MYYAItN8GsbtgWjxe4ShVLF_yUGertv2uhsjcE2zseDlyIXNFcDuxmZB4DDdkz8AbJ-j_I</recordid><startdate>19910201</startdate><enddate>19910201</enddate><creator>Watanabe, T.</creator><creator>Torii, T.</creator><creator>Hirasawa, S.</creator><creator>Takagaki, T.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>7TB</scope><scope>FR3</scope></search><sort><creationdate>19910201</creationdate><title>Radiation thermometry of silicon wafers in a diffusion furnace for fabrication of LSI</title><author>Watanabe, T. ; Torii, T. ; Hirasawa, S. ; Takagaki, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c365t-d84c9fffe86cfaf4b047360e358f53a9bff983ef930cccfdedc96248143b21833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Furnaces</topic><topic>Heating</topic><topic>Impurities</topic><topic>Large scale integration</topic><topic>Pollution measurement</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Temperature measurement</topic><topic>Wavelength measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Watanabe, T.</creatorcontrib><creatorcontrib>Torii, T.</creatorcontrib><creatorcontrib>Hirasawa, S.</creatorcontrib><creatorcontrib>Takagaki, T.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on semiconductor manufacturing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Watanabe, T.</au><au>Torii, T.</au><au>Hirasawa, S.</au><au>Takagaki, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Radiation thermometry of silicon wafers in a diffusion furnace for fabrication of LSI</atitle><jtitle>IEEE transactions on semiconductor manufacturing</jtitle><stitle>TSM</stitle><date>1991-02-01</date><risdate>1991</risdate><volume>4</volume><issue>1</issue><spage>59</spage><epage>63</epage><pages>59-63</pages><issn>0894-6507</issn><eissn>1558-2345</eissn><coden>ITSMED</coden><abstract>A radiation thermometry technique suitable for measuring the temperature of silicon wafers in a diffusion furnace has been developed. A principal feature of this technique is that it measures the temperature of wafers that are not in the line of sight of a conventional pyrometer. An optical guide, consisting of two quartz prisms, gives optical access to interior wafers in the load. A measuring wavelength of 0.9 mu m is selected since a silicon wafer is opaque and its emissivity does not depend on temperature at this wavelength. The accuracy of the thermometry is examined by comparing the measured value of the pyrometer with that of a thermocouple. The two measured values agree within +or-2 degrees C in a steady state. When wafers are being inserted into or drawn out from the furnace, however, an error is caused by the veiling glare at the optical guide and the wafer.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/66.75853</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0894-6507 |
| ispartof | IEEE transactions on semiconductor manufacturing, 1991-02, Vol.4 (1), p.59-63 |
| issn | 0894-6507 1558-2345 |
| language | eng |
| recordid | cdi_ieee_primary_75853 |
| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Applied sciences Electronics Exact sciences and technology Fabrication Furnaces Heating Impurities Large scale integration Pollution measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Temperature measurement Wavelength measurement |
| title | Radiation thermometry of silicon wafers in a diffusion furnace for fabrication of LSI |
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