A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs
This paper for the first time presents a comprehensive computational modeling approach for AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and...
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| Veröffentlicht in: | IEEE transactions on nanotechnology 2016-11, Vol.15 (6), p.947-955 |
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| container_title | IEEE transactions on nanotechnology |
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| creator | Joshi, Vipin Soni, Ankit Tiwari, Shree Prakash Shrivastava, Mayank |
| description | This paper for the first time presents a comprehensive computational modeling approach for AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and studied. Furthermore, impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted in this paper. For the first time, surface states modeled as donor type traps were correlated with gate leakage. Moreover, a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed. Finally, impact of lattice and carrier heating is studied, while highlighting the relevance of carrier heating, lattice heating, and bulk traps over the device characteristics. In addition to this, modeling strategy for other critical aspects like parasitic charges, quantum effects, S/D Schottky contacts, and high field effects is presented. |
| doi_str_mv | 10.1109/TNANO.2016.2615645 |
| format | Article |
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Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and studied. Furthermore, impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted in this paper. For the first time, surface states modeled as donor type traps were correlated with gate leakage. Moreover, a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed. Finally, impact of lattice and carrier heating is studied, while highlighting the relevance of carrier heating, lattice heating, and bulk traps over the device characteristics. In addition to this, modeling strategy for other critical aspects like parasitic charges, quantum effects, S/D Schottky contacts, and high field effects is presented.</description><identifier>ISSN: 1536-125X</identifier><identifier>EISSN: 1941-0085</identifier><identifier>DOI: 10.1109/TNANO.2016.2615645</identifier><identifier>CODEN: ITNECU</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>2-DEG ; AlGaN/GaN ; Aluminum gallium nitride ; Aluminum gallium nitrides ; Charge materials ; Computational modeling ; Computer models ; Electron traps ; Electronic devices ; Gallium nitride ; Gallium nitrides ; Gates ; HEMT ; HEMTs ; High electron mobility transistors ; hot electrons ; MODFETs ; surface traps ; Wide band gap semiconductors</subject><ispartof>IEEE transactions on nanotechnology, 2016-11, Vol.15 (6), p.947-955</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-54ef81713d941b538a1e2fe937fd45b1d17d498fe9c530396c0554996cecc6a83</citedby><cites>FETCH-LOGICAL-c361t-54ef81713d941b538a1e2fe937fd45b1d17d498fe9c530396c0554996cecc6a83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7585105$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7585105$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Joshi, Vipin</creatorcontrib><creatorcontrib>Soni, Ankit</creatorcontrib><creatorcontrib>Tiwari, Shree Prakash</creatorcontrib><creatorcontrib>Shrivastava, Mayank</creatorcontrib><title>A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs</title><title>IEEE transactions on nanotechnology</title><addtitle>TNANO</addtitle><description>This paper for the first time presents a comprehensive computational modeling approach for AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and studied. Furthermore, impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted in this paper. For the first time, surface states modeled as donor type traps were correlated with gate leakage. Moreover, a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed. Finally, impact of lattice and carrier heating is studied, while highlighting the relevance of carrier heating, lattice heating, and bulk traps over the device characteristics. In addition to this, modeling strategy for other critical aspects like parasitic charges, quantum effects, S/D Schottky contacts, and high field effects is presented.</description><subject>2-DEG</subject><subject>AlGaN/GaN</subject><subject>Aluminum gallium nitride</subject><subject>Aluminum gallium nitrides</subject><subject>Charge materials</subject><subject>Computational modeling</subject><subject>Computer models</subject><subject>Electron traps</subject><subject>Electronic devices</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>Gates</subject><subject>HEMT</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>hot electrons</subject><subject>MODFETs</subject><subject>surface traps</subject><subject>Wide band gap semiconductors</subject><issn>1536-125X</issn><issn>1941-0085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMtqwzAQRUVpoWnaH2g3hq6daCyPLC2NSZNCHpsUuhOKLTcOTuRKTqF_X-VBF8OdGeYOl0PIM9ARAJXj9TJfrkYJBT5KOCBP8YYMQKYQUyrwNvTIeAwJft6TB-93lELGUQxIkUeF3XfObM3BNz_mPB173Tf2oNtoYSvTNoevKO86Z3W5jWrroryd6uU4VDSbLNb-kdzVuvXm6apD8vE2WRezeL6avhf5PC4Zhz7G1NQCMmBVyLVBJjSYpDaSZXWV4gYqyKpUirApkVEmeUkRUxnUlCXXgg3J6-VviPJ9NL5XO3t0IaZXIJiELAHGw1VyuSqd9d6ZWnWu2Wv3q4CqEyx1hqVOsNQVVjC9XEyNMebfkKFAoMj-AKACY-c</recordid><startdate>201611</startdate><enddate>201611</enddate><creator>Joshi, Vipin</creator><creator>Soni, Ankit</creator><creator>Tiwari, Shree Prakash</creator><creator>Shrivastava, Mayank</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201611</creationdate><title>A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs</title><author>Joshi, Vipin ; Soni, Ankit ; Tiwari, Shree Prakash ; Shrivastava, Mayank</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-54ef81713d941b538a1e2fe937fd45b1d17d498fe9c530396c0554996cecc6a83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>2-DEG</topic><topic>AlGaN/GaN</topic><topic>Aluminum gallium nitride</topic><topic>Aluminum gallium nitrides</topic><topic>Charge materials</topic><topic>Computational modeling</topic><topic>Computer models</topic><topic>Electron traps</topic><topic>Electronic devices</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>Gates</topic><topic>HEMT</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>hot electrons</topic><topic>MODFETs</topic><topic>surface traps</topic><topic>Wide band gap semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Joshi, Vipin</creatorcontrib><creatorcontrib>Soni, Ankit</creatorcontrib><creatorcontrib>Tiwari, Shree Prakash</creatorcontrib><creatorcontrib>Shrivastava, Mayank</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Joshi, Vipin</au><au>Soni, Ankit</au><au>Tiwari, Shree Prakash</au><au>Shrivastava, Mayank</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs</atitle><jtitle>IEEE transactions on nanotechnology</jtitle><stitle>TNANO</stitle><date>2016-11</date><risdate>2016</risdate><volume>15</volume><issue>6</issue><spage>947</spage><epage>955</epage><pages>947-955</pages><issn>1536-125X</issn><eissn>1941-0085</eissn><coden>ITNECU</coden><abstract>This paper for the first time presents a comprehensive computational modeling approach for AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and studied. Furthermore, impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted in this paper. For the first time, surface states modeled as donor type traps were correlated with gate leakage. Moreover, a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed. Finally, impact of lattice and carrier heating is studied, while highlighting the relevance of carrier heating, lattice heating, and bulk traps over the device characteristics. In addition to this, modeling strategy for other critical aspects like parasitic charges, quantum effects, S/D Schottky contacts, and high field effects is presented.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNANO.2016.2615645</doi><tpages>9</tpages></addata></record> |
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| subjects | 2-DEG AlGaN/GaN Aluminum gallium nitride Aluminum gallium nitrides Charge materials Computational modeling Computer models Electron traps Electronic devices Gallium nitride Gallium nitrides Gates HEMT HEMTs High electron mobility transistors hot electrons MODFETs surface traps Wide band gap semiconductors |
| title | A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs |
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