Microwave Low-Noise Performance of 0.17~\mu \text Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
Microwave low-noise performance AlGaN/GaN HEMT on a SiC substrate with a wide head double-deck T-shaped gate has been reported. The HEMTs with gatelength (L g ) of 0.17 μm and source-drain spacing (L sd ) of 3.5 μm exhibited a maximum extrinsic transconductance of 360 mS/mm, a current gain cutoff fr...
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| Veröffentlicht in: | IEEE electron device letters 2016-11, Vol.37 (11), p.1407-1410 |
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| creator | Yoon, Hyung Sup Min, Byoung-Gue Lee, Jong Min Kang, Dong Min Ahn, Ho-Kyun Kim, Haecheon Lim, Jongwon |
| description | Microwave low-noise performance AlGaN/GaN HEMT on a SiC substrate with a wide head double-deck T-shaped gate has been reported. The HEMTs with gatelength (L g ) of 0.17 μm and source-drain spacing (L sd ) of 3.5 μm exhibited a maximum extrinsic transconductance of 360 mS/mm, a current gain cutoff frequency (f T ) of 50 GHz, a maximum oscillation frequency (f max ) of 149 GHz, and three-terminal breakdown voltage of 113 V. The device exhibited a minimum noise figure (NF min ) of 0.50 and 0.84 dB at 10 and 18 GHz, respectively, when biased at V ds = 5 V and I ds = 140 mA/mm, which is the lowest noise characteristics ever reported for the GaN-based T-shaped gate HEMTs with gate length larger than 0.1 μm. This excellent noise performance is attributed to the reduction of the gate resistance resulting from a wide head T-shaped gate and the improved device characteristics. |
| doi_str_mv | 10.1109/LED.2016.2612624 |
| format | Article |
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The HEMTs with gatelength (L g ) of 0.17 μm and source-drain spacing (L sd ) of 3.5 μm exhibited a maximum extrinsic transconductance of 360 mS/mm, a current gain cutoff frequency (f T ) of 50 GHz, a maximum oscillation frequency (f max ) of 149 GHz, and three-terminal breakdown voltage of 113 V. The device exhibited a minimum noise figure (NF min ) of 0.50 and 0.84 dB at 10 and 18 GHz, respectively, when biased at V ds = 5 V and I ds = 140 mA/mm, which is the lowest noise characteristics ever reported for the GaN-based T-shaped gate HEMTs with gate length larger than 0.1 μm. This excellent noise performance is attributed to the reduction of the gate resistance resulting from a wide head T-shaped gate and the improved device characteristics.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2016.2612624</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>AlGaN/GaN ; Aluminum gallium nitride ; cutoff frequency ; HEMTs ; HEMTs on SiC ; Logic gates ; minimum noise figure ; MODFETs ; Noise ; Performance evaluation ; Silicon carbide ; T-shaped gate ; Wide band gap semiconductors</subject><ispartof>IEEE electron device letters, 2016-11, Vol.37 (11), p.1407-1410</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1369-f76bf3a84aea7bfb6fe02c59b9382113c7eb280e9433a62c008d39bfc5f211c93</citedby><cites>FETCH-LOGICAL-c1369-f76bf3a84aea7bfb6fe02c59b9382113c7eb280e9433a62c008d39bfc5f211c93</cites><orcidid>0000-0003-0299-0207</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7574312$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7574312$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yoon, Hyung Sup</creatorcontrib><creatorcontrib>Min, Byoung-Gue</creatorcontrib><creatorcontrib>Lee, Jong Min</creatorcontrib><creatorcontrib>Kang, Dong Min</creatorcontrib><creatorcontrib>Ahn, Ho-Kyun</creatorcontrib><creatorcontrib>Kim, Haecheon</creatorcontrib><creatorcontrib>Lim, Jongwon</creatorcontrib><title>Microwave Low-Noise Performance of 0.17~\mu \text Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Microwave low-noise performance AlGaN/GaN HEMT on a SiC substrate with a wide head double-deck T-shaped gate has been reported. The HEMTs with gatelength (L g ) of 0.17 μm and source-drain spacing (L sd ) of 3.5 μm exhibited a maximum extrinsic transconductance of 360 mS/mm, a current gain cutoff frequency (f T ) of 50 GHz, a maximum oscillation frequency (f max ) of 149 GHz, and three-terminal breakdown voltage of 113 V. The device exhibited a minimum noise figure (NF min ) of 0.50 and 0.84 dB at 10 and 18 GHz, respectively, when biased at V ds = 5 V and I ds = 140 mA/mm, which is the lowest noise characteristics ever reported for the GaN-based T-shaped gate HEMTs with gate length larger than 0.1 μm. This excellent noise performance is attributed to the reduction of the gate resistance resulting from a wide head T-shaped gate and the improved device characteristics.</description><subject>AlGaN/GaN</subject><subject>Aluminum gallium nitride</subject><subject>cutoff frequency</subject><subject>HEMTs</subject><subject>HEMTs on SiC</subject><subject>Logic gates</subject><subject>minimum noise figure</subject><subject>MODFETs</subject><subject>Noise</subject><subject>Performance evaluation</subject><subject>Silicon carbide</subject><subject>T-shaped gate</subject><subject>Wide band gap semiconductors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kElPwkAUxydGExG9m3iZxPPALO1MezSAYFLQBAwXkmY6fSNF6GAX0YN-dssSDy_v8N-SH0K3jHYYo2E3GvQ7nDLZ4ZJxyb0z1GK-HxDqS3GOWlR5jAhG5SW6KssVpczzlNdCP-PMFG6nPwFHbkcmLisBv0BhXbHRuQHsLG4W1O9iU-NFBV8VHuoKSAT5W7XED-uhnnSbw6PBeFZil-Np1sPzrNHmWQp4BDrFfVcnayB9MO94RqZLvYX0UHONLqxel3Bz-m30-jiY9UYkeh4-9R4iYpiQIbFKJlbowNOgVWITaYFy44dJKALOmDAKEh5QCD0htOSG0iAVYWKNbxvZhKKN7o-928J91FBW8crVRd5MxiwQBxRq76JHV0OkLAuw8bbINrr4jhmN95DjBnK8hxyfIDeRu2MkA4B_u_KVJxgXfzDFdUY</recordid><startdate>201611</startdate><enddate>201611</enddate><creator>Yoon, Hyung Sup</creator><creator>Min, Byoung-Gue</creator><creator>Lee, Jong Min</creator><creator>Kang, Dong Min</creator><creator>Ahn, Ho-Kyun</creator><creator>Kim, Haecheon</creator><creator>Lim, Jongwon</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0299-0207</orcidid></search><sort><creationdate>201611</creationdate><title>Microwave Low-Noise Performance of 0.17~\mu \text Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate</title><author>Yoon, Hyung Sup ; Min, Byoung-Gue ; Lee, Jong Min ; Kang, Dong Min ; Ahn, Ho-Kyun ; Kim, Haecheon ; Lim, Jongwon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1369-f76bf3a84aea7bfb6fe02c59b9382113c7eb280e9433a62c008d39bfc5f211c93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>AlGaN/GaN</topic><topic>Aluminum gallium nitride</topic><topic>cutoff frequency</topic><topic>HEMTs</topic><topic>HEMTs on SiC</topic><topic>Logic gates</topic><topic>minimum noise figure</topic><topic>MODFETs</topic><topic>Noise</topic><topic>Performance evaluation</topic><topic>Silicon carbide</topic><topic>T-shaped gate</topic><topic>Wide band gap semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoon, Hyung Sup</creatorcontrib><creatorcontrib>Min, Byoung-Gue</creatorcontrib><creatorcontrib>Lee, Jong Min</creatorcontrib><creatorcontrib>Kang, Dong Min</creatorcontrib><creatorcontrib>Ahn, Ho-Kyun</creatorcontrib><creatorcontrib>Kim, Haecheon</creatorcontrib><creatorcontrib>Lim, Jongwon</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yoon, Hyung Sup</au><au>Min, Byoung-Gue</au><au>Lee, Jong Min</au><au>Kang, Dong Min</au><au>Ahn, Ho-Kyun</au><au>Kim, Haecheon</au><au>Lim, Jongwon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microwave Low-Noise Performance of 0.17~\mu \text Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2016-11</date><risdate>2016</risdate><volume>37</volume><issue>11</issue><spage>1407</spage><epage>1410</epage><pages>1407-1410</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Microwave low-noise performance AlGaN/GaN HEMT on a SiC substrate with a wide head double-deck T-shaped gate has been reported. The HEMTs with gatelength (L g ) of 0.17 μm and source-drain spacing (L sd ) of 3.5 μm exhibited a maximum extrinsic transconductance of 360 mS/mm, a current gain cutoff frequency (f T ) of 50 GHz, a maximum oscillation frequency (f max ) of 149 GHz, and three-terminal breakdown voltage of 113 V. The device exhibited a minimum noise figure (NF min ) of 0.50 and 0.84 dB at 10 and 18 GHz, respectively, when biased at V ds = 5 V and I ds = 140 mA/mm, which is the lowest noise characteristics ever reported for the GaN-based T-shaped gate HEMTs with gate length larger than 0.1 μm. This excellent noise performance is attributed to the reduction of the gate resistance resulting from a wide head T-shaped gate and the improved device characteristics.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2016.2612624</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-0299-0207</orcidid></addata></record> |
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| subjects | AlGaN/GaN Aluminum gallium nitride cutoff frequency HEMTs HEMTs on SiC Logic gates minimum noise figure MODFETs Noise Performance evaluation Silicon carbide T-shaped gate Wide band gap semiconductors |
| title | Microwave Low-Noise Performance of 0.17~\mu \text Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate |
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