A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology

While silicon controlled rectifiers (SCRs) are highly robust electrostatic discharge (ESD) protection devices, they typically are not suited for high-voltage ESD protection due to their inherently low holding voltage and thus vulnerability to latch-up threat. In this letter, a new high holding volta...

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Veröffentlicht in:	IEEE electron device letters 2016-10, Vol.37 (10), p.1311-1313
Hauptverfasser:	Xiaozong Huang, Liou, Juin J., Zhiwei Liu, Fan Liu, Jizhi Liu, Hui Cheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Current density dual directional silicon controlled rectifier (DDSCR) Electrostatic discharge (ESD) Electrostatic discharges high holding voltage Robustness segmented technique Thyristors Topology Voltage measurement
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